Allicdata Part #: | PH1330AL,115-ND |
Manufacturer Part#: |
PH1330AL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 100A LFPAK |
More Detail: | N-Channel 30V 100A (Tc) Surface Mount LFPAK56, Po... |
DataSheet: | PH1330AL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | SOT-1023, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6227pF @ 12V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 1.3 mOhm @ 15A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PH1330AL,115 is a field-effect transistor (FET) with a particular application in either an enhancement-mode or a depletion-mode. It is a single transistor, which is a type of electronic switch that can be used in either digital or analog circuits.
The device is widely used in a variety of applications, including amplifiers, DC-DC converters, gate drivers and analog circuits. The majority of FETs are used as switches but the PH1330AL,115 can also have uses as a voltage regulator.
The PH1330AL,115 is an n-channel device and uses n-type semiconductor materials for its gate and drain structures. The gate is typically made from a variety of metals, including aluminum, tungsten or cobalt, while the drain is made from some type of electrical insulator such as silicon dioxide.
The working principle behind the FET is very simple and is based on the concept of electrostatic attraction and repulsion. In the device, the gate is connected to the source, while the drain is connected to the substrate. When the gate voltage is made negative with respect to the source voltage, it allows electrons to flow from the source to the drain.
The drain current is determined by the size of the channel that is created between the gate and the drain, which is controlled by the size of the gate voltage. The channel size is determined by the amount of potential difference between the gate and the source, which allows for a larger or smaller current to flow.
The PH1330AL,115 has an on-resistance of approximately 26 ohms. This is the amount of opposition to current flow through the device, and is referred to as the device\'s switching speed. The higher the on-resistance, the slower the device acts as a switch.
The PH1330AL,115 is also capable of handling large voltages and currents, making it suitable for power applications such as RF amplifiers. It is also capable of operating at high temperatures, making it suitable for use in high-power industrial products.
In summary, the PH1330AL,115 is a single n-channel FET device that is capable of operation in either an enhancement or depletion mode. It is highly versatile and can be used for a variety of applications, including amplifiers, DC-DC converters, gate drivers and analog circuits. It has a high on-resistance, making it suitable for use as a switch in either digital or analog circuits, and is capable of handling large voltages and currents, making it suitable for use in power applications.
The specific data is subject to PDF, and the above content is for reference
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