Allicdata Part #: | PH2230DLSX-ND |
Manufacturer Part#: |
PH2230DLSX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH TRENCH |
More Detail: | Surface Mount LFPAK56, Power-SO8 |
DataSheet: | PH2230DLSX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
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PH2230DLSX is a single N-type metal-oxide-semiconductor field-effect transistor (MOSFET) specially designed for general purpose applications. Its high current and low on-resistance make it ideal for power management, motor control, high-efficiency power conversion and telecom applications.
The MOSFET is composed of a gate, drain, and source. A voltage applied to the gate creates an electric field that attracts the electrons from the source to the drain, creating a channel for current to flow. This field modulation phenomenon, known as "field effect", allows the MOSFET to regulate the current on the drain side of the transistor by controlling the voltage applied to the gate.
The PH2230DLSX operates as an enhancement mode MOSFET, which means that it is normally "OFF" and will only start conducting when the gate voltage is greater than the threshold voltage applied to the MOSFET. The reverse body diode of the PH2230DLSX is also important to note, since it allows current to flow in the reverse direction when it is subjected to a voltage greater than its rated value. This phenomenon is known as "reverse body diode breakdown voltage", or "RBDV".
The PH2230DLSX is a versatile device as it allows a wide range of operating voltages, from -3V to +30V, and drain current ratings from 5A to 49A at 25°C. It is capable of driving up to 200A in pulsed situations and tolerates fast voltage and current transients, making it ideal for use in high-power applications. Furthermore, the PH2230DLSX features a low typical on-resistance of 0.037Ω and high current ratings, making it an ideal choice for power management and motor control.
The PH2230DLSX can also be used in low voltage applications such as low voltage power conversion. The device provides a low leakage current of 10nA at 25°C, and a thermal resistance junction-to-case of 40°C/W at it maximum rated power and real maximum ambient, making it well-suited for high-efficiency conversion applications. Finally, the PH2230DLSX is available in the industry standard 8 pin or 8MAP packages, further expanding its versatility and making it perfect for applications in the telecom industry.
In conclusion, the PH2230DLSX is a highly versatile, low-cost MOSFET designed for a wide range of applications. Its high current and low on-resistance make it ideal for power management, motor control, high-efficiency power conversion, and telecom applications. Its low leakage current and thermal resistance junction-to-case make it well-suited for low-power applications, and its availability in both 8-pin and 8MAP packages allow for flexibility in design. The PH2230DLSX is a reliable and cost-effective MOSFET for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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