PH2625L,115 Discrete Semiconductor Products |
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| Allicdata Part #: | 1727-3051-1-ND |
| Manufacturer Part#: |
PH2625L,115 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 25V 100A LFPAK |
| More Detail: | N-Channel 25V 100A (Tc) 62.5W (Tc) Surface Mount L... |
| DataSheet: |  PH2625L,115 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | SC-100, SOT-669, 4-LFPAK |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 62.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4308pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 4.5V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 25A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Cut Tape (CT) |
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。The PH2625L,115 is a single-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) supplied with a low source-drain injection and high current handling capability. The device is best suited for applications requiring high-power switching or signal processing. This MOSFET has a low turn-on voltage and is suitable for logic and signal processing applications.
The PH2625L,115 is a N-Channel Enhancement-Mode MOSFET. It consists of a single-gate oxide-insulated N-channel MOSFET field-effect transistor. The oxide insulation between the gate and source-drain provide the necessary voltage thresholds for the device to remain in the enhancement mode. In this mode, the source-drain channels are open-circuit when the gate is not provided with any voltage.
The PH2625L,115 has low gate-leakage current, with a threshold voltage of 1.8V. The device is rated for a maximum drain-source drain-source current of 1.2A and a maximum drain-source voltage of 25V, allowing it to handle a variety of signals and power networks. The device is also RoHS compliant, making it a popular choice for consumer and industrial applications alike.
The PH2625L,115 can be used in a variety of circuits, such as power control, high-speed switching, and signal processing. The device can be used to switch between power sources, allowing the user to switch between different DC voltages without the need for a voltage regulator. The step-down converter circuit can also be simulated using this device. The device can also be used to control high-speed switching and logic circuits, making it suitable for signal processing in various applications.
The PH2625L,115 has an internal avalanche breakdown strength of 80V. This avalanche characteristic protects the device from over-voltage conditions, and make it suitable for reliable operation. The gate oxide insulation provides reliable device isolation, ensuring the device will perform consistently and accurately when switching circuit paths.
In conclusion, the PH2625L,115 is a single-gate N-Channel Enhancement-Mode MOSFET with low source-drain injection and high current-handling capability. The device is suitable for high-power switching, signal processing and logic circuit applications. It has a low turn-on voltage and is RoHS compliant. The device is relatively easy to use and provides reliable performance in a variety of circuit paths.
The specific data is subject to PDF, and the above content is for reference
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