Allicdata Part #: | PH3030AL,115-ND |
Manufacturer Part#: |
PH3030AL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 100A LFPAK |
More Detail: | N-Channel 30V 100A (Tc) Surface Mount LFPAK56, Po... |
DataSheet: | PH3030AL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2822pF @ 12V |
Gate Charge (Qg) (Max) @ Vgs: | 45.8nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 15A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PH3030AL,115 is a single MOSFET that is commonly used due to its impressive characteristics and excellent performance. This MOSFET device is an understanding necessary for anyone interested in utilizing their attributes and power. This article provides an overview of the PH3030AL,115 MOSFET application field and working principle.
Application Field
The PH3030AL,115 is a single MOSFET that provides exceptional safe operating area and low gate charge. This makes the PH3030AL,115 ideal for efficient high-current switching applications such as fast switching DC-DC converters and load switching designs. Other applications where this MOSFET is a popular choice include motor control in consumer electronics and switching phases in high-frequency inverters.
The PH3030AL,115 also exhibits excellent static and dynamic characteristics, making it ideal for use in very fast switching circuits, for example as a high-frequency pulse source in pulse-width-modulation controllers. The PH3030AL,115 characteristics allow for usage in high-power current-sensing circuits, because of its low on-resistance and a wide selection of available options (such as the -L and -T versions).
Working Principle
A MOSFET is essentially a field-effect transistor which controls the flow of electrons. It is designed such that it has three contacts called the source, drain, and gate. It can be operated as either a n-channel or a p-channel type device. The PH3030AL,115 is a n-channel MOSFET device, meaning the channel is composed of predominantly n-type material.
The current between the source and the drain is controlled by the voltages applied to the gate. When a positive voltage is applied to the gate, it creates an electric field which attracts, or draws, electrons from the source to the drain and thus allowing a current to flow between the source and the drain. This current is known as the drain current, ID.When the voltage on the gate is reversed, the electric field changes direction and this results in the electric field repelling the electrons from the drain back to the source, thus reducing the drain current. Thus, the flow of current from the source to the drain is switched on and off by varying the voltage applied to the gate.
In order for the MOSFET device to be properly operated, it is important that the proper level of gate voltage and gate current are applied, as well as the proper level of Drain-Source voltage. If the drain-source voltage exceeds the limit defined by the division’s safe operating area, then it can result in permanent damage to the device, therefore it is important to ensure the proper operating conditions are always maintained.
Conclusion
The PH3030AL,115 is a versatile and reliable MOSFET device, making it an ideal choice for many different types of applications. It has a variety of characteristics that make it perfect for use in high-current switching, motor control and pulse modulation circuits that require fast switching. Additionally, it is important to pay attention to the gate voltage and current, as well as the drain-source voltage to ensure it is properly operating, since too high of a voltage can cause permanent damage to the device.
The specific data is subject to PDF, and the above content is for reference
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PH3030AL,115 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 30V 100A LFPA... |
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