PH3230S,115 Discrete Semiconductor Products |
|
| Allicdata Part #: | 1727-3122-1-ND |
| Manufacturer Part#: |
PH3230S,115 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 30V 100A LFPAK |
| More Detail: | N-Channel 30V 100A (Tc) 62.5W (Tc) Surface Mount L... |
| DataSheet: |  PH3230S,115 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Package / Case: | SC-100, SOT-669, 4-LFPAK |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 62.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 5V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Cut Tape (CT) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PH3230S,115 is a P-channel insulated gate field effect transistor (IGFET). It is an ideal device for applications such as motor control, switching regulators and power management.
This MOSFET features trench-gate technology and low ON-resistance ratings that offer lower gate charge and higher operating temperature capabilities in comparison to traditional MOSFETs. The PH3230S,115 provides high dielectric strength, with excellent ESD protection. With a low gate-to-source threshold voltage, it is fully capable of operating at key power management frequencies up to 10 MHz.
Working Principle
The PH3230S,115 is an insulated gate field effect transistor (IGFET) which works on the principle of voltage control. In a MOSFET, the insulated gate is connected to the source and the drain is connected to the load. When a voltage is applied to the gate, it forms an electric field which in turn controls the current that can flow from the source to the drain.
The electric field forms a channel through which the current flows from the source to the drain. The voltage applied to the gate controls the width of the channel and thus, controls the current flow. When the gate voltage is increased, the width of the channel increases and more current can flow. The purpose of the insulated gate is to insulate the gate voltage from the drain and source, hence the term insulated gate field effect transistor (IGFET).
Application fields
The PH3230S,115 is often used in high performance applications due to its low on-resistance rating. It is often used in motor control applications such as DC motors, servo motors, and linear actuators. Furthermore, it can also be used in switching regulators and power management.
For example, it is often used in switching regulators for the purpose of regulating the output voltage. It allows for step-down, step-up, and buck-boost applications by changing the duty ratio of the switches. It is also used in power management applications such as AC/DC converters, battery chargers, and solar inverters. It is also used in computer systems for standby power control.
In addition, the PH3230S,115 can also be used in digital systems such as micro Processors, digital signal processors, and field programmable gate arrays (FPGAs). It provides an efficient switching path between the logic control and the power supply, while providing a low level of power consumption. It is also used in automotive applications such as headlight control.
Conclusion
The PH3230S,115 is a P-channel insulated gate field effect transistor (IGFET) that is used in high performance applications. It features trench-gate technology and low ON-resistance ratings, making it ideal for motor control, switching regulators, and power management applications. It provides an efficient switching path between the logic control and the power supply, while providing a low level of power consumption.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| PH3230S,115 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 30V 100A LFPA... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...