| Allicdata Part #: | PH4030AL,115-ND |
| Manufacturer Part#: |
PH4030AL,115 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 30V 100A LFPAK |
| More Detail: | N-Channel 30V 100A (Tc) Surface Mount LFPAK56, Po... |
| DataSheet: |  PH4030AL,115 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
| Package / Case: | SC-100, SOT-669, 4-LFPAK |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -- |
| Power Dissipation (Max): | -- |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2090pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs: | 36.6nC @ 10V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 4 mOhm @ 15A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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PH4030AL,115 is a special kind of field effect transistor (FET), also known as a MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). It is a single transistor, meaning it has a single gate and single source, and is designed to be used in high-speed switching applications. A FET has three terminals, the drain, gate, and source, which are used to control the transistor’s conductivity.
MOSFETs are transistors that control the flow of current between the source and the drain by varying the voltage applied to the gate. This is one of their greatest features: when the gate voltage increases, the resistance between the source and drain decreases, allowing for more current to flow. Conversely, when the gate voltage decreases, the resistance increases and causes less current to flow.
The PH4030AL,115 MOSFET is a power FET that is designed to be used in high-frequency switching applications, such as in radio frequency (RF) transceivers, amplifiers, and switching power supplies. The FET has a drain-to-source breakdown voltage of 40 V and a drain current rating of 30 A, which allows it to handle large power loads. Its gate threshold voltage is very low and its gate capacitance is minimized for fast switching capabilities.
The PH4030AL,115 MOSFET has a very low gate leakage current, which makes it suitable for high-temperature applications. The FET also features a very low thermal resistance and is available in a number of different packages to meet different requirements. Its avalanche energy rating is high, which makes it suitable for high-voltage switching applications.
The PH4030AL,115 MOSFET is a powerful and reliable device that is capable of handling large power loads and switching at high frequencies. It is well-suited for applications such as switching power supplies, radio frequency transceivers, amplifiers and many more. Its low gate leakage current, low thermal resistance and high avalanche energy rating make it a great choice for a variety of high power applications.
The specific data is subject to PDF, and the above content is for reference
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