Allicdata Part #: | PH5030AL,115-ND |
Manufacturer Part#: |
PH5030AL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 91A LFPAK |
More Detail: | N-Channel 30V 91A (Tc) Surface Mount LFPAK56, Pow... |
DataSheet: | PH5030AL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1760pF @ 12V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 15A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 91A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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A PH5030AL,115 is a field effect transistor (FET) that belongs to the single MOSFET category. It is a three-terminal FET that belongs to the family of metal oxide semiconductor (MOS) FETs. It has a drain, a gate and a source, and operates as a voltage-controlled resistor. It is a n-channel enhancement mode FET that uses the oxide semiconductor layer as the gate dielectric. This type of FET offers low power loss, high blocking voltage and excellent switching capability due to its fast switching speed.
As with other MOSFETs, PH5030AL,115 has low on-resistance, allowing low RDS(ON). This means that the device can deliver high levels of current with minimal power loss. As such, it can be used in a variety of applications which require high levels of current and efficiency. PH5030AL,115 can be used in electronic switches, power converters, audio amplifiers, motor drives and other general purpose switching applications.
The working principle of PH5030AL,115 is based on the MOSFET channel resistance. When a voltage potential is applied between its gate and source, the FET will create an electrical channel between the source and drain. This electrical channel will act as a resistor, allowing current to pass through it. The amount of current that passes through the channel is determined by the voltage applied between the gate and source. Higher gate-source voltages will increase the conductivity of the channel and result in more current passing through. This allows the device to be used as switches, as the electrical channel can be turned on and off.
PH5030AL,115 can work with a wide range of voltages, making it suitable for use in many different circuits. The device features a low gate-source leakage current, making it useful for designs which require a low leakage current. The device also has a low on-state gate charge which helps reduce conduction losses and improves overall efficiency. PH5030AL,115 has an operating temperature range of -55C to 125C, making it suitable for use in both low temperature and high temperature applications.
PH5030AL,115’s low on-resistance, low gate-source leakage current, and low on-state gate charge makes it suitable for cost-sensitive applications. These characteristics, combined with its wide range of operating voltages and its fast switching speed, makes it a popular choice for a variety of applications. It can be used in motor drives, solid-state power conversion, audio amplifiers, and various other switching applications. PH5030AL,115 is a low-cost and reliable FET that is easy to use in various applications.
The specific data is subject to PDF, and the above content is for reference
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