PH8230E,115 Discrete Semiconductor Products |
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| Allicdata Part #: | 1727-3123-1-ND |
| Manufacturer Part#: |
PH8230E,115 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 30V 67A LFPAK |
| More Detail: | N-Channel 30V 67A (Tc) 62.5W (Tc) Surface Mount LF... |
| DataSheet: |  PH8230E,115 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | SC-100, SOT-669, 4-LFPAK |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Mounting Type: | Surface Mount |
| Power Dissipation (Max): | 62.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 5V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Cut Tape (CT) |
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PH8230E,115 Application Field and Working Principle
The PH8230E,115 transistor is a high voltage enhanced FET, also known as an enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor). It is designed for switching and amplifier applications. The device has excellent thermal stability with "HyperFast" recover time, making it suitable for high switching frequency applications.
The main features of this MOSFET are that it has a breakdown voltage of +/- 20V and an operating temperature range of -55 to +150 degrees Celsius. It also has a very low input capacitance of just 5 pF and a trr (Turn-On-Time) of less than 10 ns. According to the datasheet, it has a dielectric strength of greater than 1700 V/micro meter and is able to withstand overvoltage at the gate. It also has a maximum operating voltage of 4.0 V.
Working Principle of PH8230E,115
The PH8230E,115 MOSFET consists of an array of transistors that are connected together in order to provide a higher voltage rating and improved on resistance. This FET is designed to operate in the enhancement mode, meaning that it can conduct current without the need for a gate voltage. In order to turn it "on" there must be an adequate gate voltage that is applied to the MOSFET. When the voltage is applied, the transistor will turn "on" and begin to conducting current. When the gate voltage is removed then the transistor will turn "off" and stop conducting.
The PH8230E,115 MOSFET also has an internal structure that is optimized for a fast response time. It features stepless body bias and high immunity to electrostatic discharge (ESD). This internal structure allows the device to operate in high frequencies. Furthermore, the device features a maximum RDS(ON) of just 0.13Ω, making it an ideal choice for high frequency switching applications.
Typical Applications of PH8230E,115
The PH8230E,115 MOSFET is typically used in high voltage switching applications. Due to its low capacitance, it can be used to switch small signals without any significant reduction in signal quality. It is also used for the purpose of increasing the voltage rating of a system, allowing it to operate in higher voltages without having to use additional components. It is also used in power supplies and other high frequency circuits that require a fast switching characteristic.
The PH8230E,115 MOSFET can also be used in motor control applications, since it has a fast switching time and can handle large currents. It is also suitable for driving relays and inductive loads as well as other high voltage loads. Additionally, the device can be used in audio applications, since it has excellent properties at frequencies up to 300 kHz.
Overall, the PH8230E,115 MOSFET is a great choice for a variety of applications due to its superior thermal stability, fast switching time, and low capacitance. It has excellent properties that make it ideal for high voltage and high frequency applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| PH8230E,115 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 30V 67A LFPAK... |
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