| Allicdata Part #: | PH955L,115-ND |
| Manufacturer Part#: |
PH955L,115 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 55V 62.5A LFPAK |
| More Detail: | N-Channel 55V 62.5A (Tc) 62.5W (Tc) Surface Mount ... |
| DataSheet: |  PH955L,115 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | SC-100, SOT-669, 4-LFPAK |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 62.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2836pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 5V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 8.3 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 62.5A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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Phenix PH955L,115 is a single N-channel enhancement-mode MOSFET produced by Phenix, designed for low voltage and low current requirements. High- performance FETs (Field-Effect Transistors) dedicated for International Rectifier offer a range of characteristics, cost-effective versions suitable for high-frequency and market-leading versions for high-performance repowering.
The Phenix PH955L,115 is a transistor with a low threshold voltage and a lower on-resistance than other comparable transistors. The PH955L,115 has a low ON resistance, high-speed switching and low-loss. It is fast-switching and offers very low gate capacitance. It is designed for advanced converter architecture, providing superior efficiency and superior ESD capability. The device has an N-channel structure, which allows for small capacitive control of the device.
The PH955L,115 is suitable for both power management and switching applications. It can be used for DC/DC or AC/DC conversion, as well as for motor control. In addition, it is suitable for voltage regulation and high-frequency amplifier design. It can also be used in audio and video applications, as it can drive large loads and has excellent high speed switching capability.
The working principle of the PH955L,115 is based on the basic operation of an FET (Field-Effect Transistor). FETs are unipolar semiconductor devices composed of two terminals (the source and the drain) and one gate terminal. When a voltage is applied between the source and gate, the electric field generated controls the current conducted between the source and drain. This is known as the “gate effect” and is the main reason FETs are so useful in various applications.
In the case of the PH955L,115, it operates as an enhancement type device, meaning that it can be turned “on” and “off” by applying or removing a voltage from the gate. When the voltage applied to the gate is positive, the device is “on” and a current can flow through the device. When the voltage on the gate is reduced, the device is “off” and the current stops.
The PH955L,115 has a very low threshold voltage of -1.2V. This means that it can be turned “on” and “off” by applying a very small voltage to the gate, making it ideal for low power applications. The device also has a very low ON resistance, meaning that when turned “on”, it can carry a large amount of current while dissipating very little power.
In addition to its low power requirements, the PH955L,115 also offers a high switch speed and a low gate capacitance for use in high-frequency applications. The device is also highly resistant to electrostatic discharge (ESD), meaning that it is extremely reliable in hostile environments.
Overall, the Phenix PH955L,115 is an excellent single N-channel MOSFET, offering high performance and low power requirements. It is suitable for a wide variety of applications, including power management, switch mode power supplies and motor control. The device is fast-switching and highly resistant to ESD, making it ideal for use in modern electronics.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| PH955L,115 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 55V 62.5A LFP... |
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