PHB66NQ03LT,118 Discrete Semiconductor Products |
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| Allicdata Part #: | 1727-4768-2-ND |
| Manufacturer Part#: |
PHB66NQ03LT,118 |
| Price: | $ 0.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 25V 66A D2PAK |
| More Detail: | N-Channel 25V 66A (Tc) 93W (Tc) Surface Mount D2PA... |
| DataSheet: |  PHB66NQ03LT,118 Datasheet/PDF |
| Quantity: | 1600 |
| 800 +: | $ 0.29960 |
| Series: | TrenchMOS™ |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 66A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 93W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D2PAK |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The PHB66NQ03LT,118 is a type of Field Effect Transistor (FET). A FET is an electronic semiconductor device that forms the basis for much of the technology that we use in our everyday lives. FETs are often classified by their structure and the number of elements within them. In the case of the PHB66NQ03LT,118, it is a single element type of FET.
The most common type of FET is a Metal Oxide Semiconductor FET (MOSFET). This type of FET is made up of three primary components: the source (or ground), the gate, and the drain. The source and drain are the business end of the FET, where the current flows through. The current can be controlled by adjusting the voltage applied to the gate.
As the name suggests, the PHB66NQ03LT,118 is a single element MOSFET. That means that it has only one element, like a single transistor. It is made of a silicon substrate, with a thin insulating layer of silicon dioxide (SiO2) on top. On top of this is a metal gate. The gate is connected to the source and drain by metal contacts.
The PHB66NQ03LT,118 is most commonly used in applications requiring high voltage, high current, and low power dissipation. It is used as a power switch in power supplies, motor control modules, and other high voltage applications. It is also used to control the current speed in DC motors, and to provide input protection on audio amplifiers.
The main advantage of the PHB66NQ03LT,118 is its high voltage and current handling abilities. It can handle up to 200V and up to 2.5A of current, making it an ideal choice for applications that require high current switching.
The basic working principle of the PHB66NQ03LT,118 is quite simple. The voltage applied to the gate controls the amount of current that flows from the source to the drain. If the voltage applied to the gate is high enough, current will flow from the source to the drain. Conversely, if the voltage applied to the gate is low enough, the current will stop flowing.
The PHB66NQ03LT,118 is a great choice for applications that require fast switching and high current handling. It is small, efficient, and can handle high voltages and currents. It is one of the most popular types of FETs on the market, and is widely used in high voltage and current power devices.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| PHB66NQ03LT,118 | Nexperia USA... | 0.34 $ | 1600 | MOSFET N-CH 25V 66A D2PAK... |
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