| Allicdata Part #: | PHD20N06T,118-ND |
| Manufacturer Part#: |
PHD20N06T,118 |
| Price: | $ 0.21 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 55V 18A DPAK |
| More Detail: | N-Channel 55V 18A (Tc) 51W (Tc) Surface Mount DPAK |
| DataSheet: |  PHD20N06T,118 Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.18969 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 51W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 422pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 77 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The PHD20N06T, 118 is a high-performance insulated gate field effect transistor (IG-FET) from HTMOS Semiconductor. It is a dual gate, normally-off transistor (with a low threshold voltage), with a high gate breakdown voltage and low on-resistance. It can also operate at high switching speeds. The device is suitable for power control applications in industrial and automotive applications.
The PHD20N06T,118 is a single, insulated gate field effect transistor (IG-FET). It is composed of two p-type drain terminals, and two n-type source terminals. The source and drain terminals are insulated from each other, allowing for very high operating voltages. The gate terminal is connected to both the source and drain terminals, and controls the conductivity between them.When a gate voltage is applied, the transistor turns on, and the drain current flows. When the gate voltage is removed, the transistor turns off, and the drain current stops. The gate voltage can be adjusted to control the amount of current flowing through the device.
The PHD20N06T,118 is designed to be used in power switching applications such as motor control, power regulation, and power inverter circuits. It is capable of switching at high frequencies, making it suitable for switching applications with high switching speeds. It can also be used for high-side switches, as it can handle large amounts of current. The device is rated for a maximum current of 20A, and can operate at peak voltages of up to 500V.
The PHD20N06T,118 has a low on-resistance of 1 ohm, making it very efficient in power switching applications. The device has a very high gate breakdown voltage of 6V, making it suitable for use in high voltage applications. The device also has an internal diodes structure, which helps to protect the device from high voltages and transient overloads.
The PHD20N06T,118 is a reliable and efficient single FET, suitable for use in a wide range of power control applications. It is rated for a large current of 20A, and can operate at high frequencies. The device has a low on-resistance, a high gate breakdown voltage, and an internal diode structure which helps to protect the device from transient overloads. The device is a cost-effective solution for power control applications, and is ideal for use in industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| PHD20N06T,118 | Nexperia USA... | 0.21 $ | 1000 | MOSFET N-CH 55V 18A DPAKN... |
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