PHD71NQ03LT,118 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 1mA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	120W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1220pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13.2nC @ 5V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	10 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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PHD71NQ03LT,118 Application Field and Working Principle

The PHD71NQ03LT,118 is a perfect choice for many applications that require a reliable high-power FET (Field-Effect Transistor). It is also good for controlling current and voltage in circuits. This IGBT (Insulated Gate Bipolar Transistor) is capable of switching loads with very low loss, high speed, and high accuracy. In this article, we will look at the application fields and the working principle of the PHD71NQ03LT,118.

Application Fields

The PHD71NQ03LT,118 can be used in a variety of applications due to its very low switch loss and high frequency operation. First, it can be used to control the output of motor drivers. By using this FET, the motor rotation can be adjusted quickly and accurately. Second, it can be used to regulate the output current of switching power supplies and DC-DC converters. Third, it is suitable for applications in power electronics like converters and inverters. In addition, it can be used in instrumentation circuits, electronic circuits, and other electronic systems.

Working Principle

The PHD71NQ03LT,118 is a 3-terminal FET that consists of a source, a drain, and a gate. When a voltage is applied to the source and the drain, the gate produces an electric field that modulates the current between the source and the drain. This modulation can either increase or decrease the current, permitting voltage and current regulation. The speed of the operation can be adjusted by applying a voltage to the gate and the amount of current passing through the device can be controlled.

Conclusion

The PHD71NQ03LT,118 is a perfect choice for many applications requiring a high power FET. It is capable of switching loads quickly and accurately and can be used in motor drivers, power supply & DC-DC converters, and other power electronics devices. In addition, its working principle is based on the manipulation of electric fields, which allows for precise voltage and current regulation.

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