PHK04P02T,518 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Last Time Buy
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	16V
Current - Continuous Drain (Id) @ 25°C:	4.66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 10V
Rds On (Max) @ Id, Vgs:	120 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:	600mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	7.2nC @ 4.5V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	528pF @ 12.8V
FET Feature:	--
Power Dissipation (Max):	5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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Introduction

The PHK04P02T 518 is a single power field-effect transistor (FET). A FET is a semiconductor device similar to a BJT, or bipolar junction transistor. However, it has significant differences in terms of its construction, operating characteristics, and uses. In this article, we will discuss the application field and working principle of the PHK04P02T 518 device.

Application Field

The PHK04P02T 518 device is often used in applications requiring a high-power switch with low on-resistance and high breakdown voltage. Typical applications include switching in high-power motor drives, power converters, power inverters, and DC-DC converters. It is also used as a high-frequency switch in communication systems, switching circuits in industrial systems, and as a current sensing switch.

Features

The PHK04P02T 518’s main features include: a low on-resistance of 9 milliohms; high breakdown voltage of 600V; low switching threshold voltage of 2–4V; low input capacitance of 900pF; high current density of 4A/mm2; and a low charging time of 0.7microseconds. These features make the device ideal for high-power applications.

Working Principle

The PHK04P02T 518 operates on a principle similar to that of a conventional BJT, but with a few minor differences. It consists of a source, drain, and gate. A positive gate voltage attracts electrons from the source to the drain. As the electrons move from source to drain, a channel is created, allowing current to flow between the two. The resistance of the channel is dependent on the amount of gate voltage. The device also has a built-in Zener diode, which can be used to protect the device from overvoltage.

Conclusion

In conclusion, the PHK04P02T 518 is a single power FET with low on-resistance and high breakdown voltage, making it ideal for high-power applications. It operates on a principle similar to a BJT, with a gate voltage controlling the flow of current between the source and drain. Its numerous features, such as low switching thresholds, input capacitances, and current densities, make it a powerful choice for many designs.

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