Allicdata Part #: | PHK13N03LT,518-ND |
Manufacturer Part#: |
PHK13N03LT,518 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 13.8A 8-SOIC |
More Detail: | N-Channel 30V 13.8A (Tc) 6.25W (Tc) Surface Mount ... |
DataSheet: | PHK13N03LT,518 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.11160 |
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 13.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10.7nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 752pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 6.25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
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PHK13N03LT, 518 is a single field-effect transistor (FET) that is manufactured by Sumitomo Electric Industries. It is an enhancement type with a threshold voltage of 2.8 volts. The device is packaged in a two-pin small outline package (SOP).
The PHK13N03LT, 518 has various characteristics that make it well-suited for a wide range of applications. It has a maximum drain current of 7 amperes and a maximum drain-source voltage of 30 volts. The on-resistance of the device is 0.9 ohms and its maximum current gain is 110. It has a maximum power dissipation of 400 mW and a maximum operating temperature of 150°C. The device has a low gate threshold voltage, which makes it ideal for low-voltage circuitry.
The FET works by using an electric field to create a channel between its source and drain. This channel provides a path for current to flow between the source and drain. The FET is controlled by a control gate, which can be used to regulate the current that passes through the channel. This is done by controlling the voltage of the gate, which changes the electric field and thus, the amount of current that can pass through the channel. This makes the FET ideal for controlled current regulation and provides a great deal of electrical control.
The FET is ideal for a wide range of applications due to its low on-resistance, low threshold voltage, and high current gain. These properties make it well-suited for use in low-voltage circuitry. It can also be used for high-power and high-speed switching, voltage regulation, and amplifying applications. It is also used in power management circuits and motor control devices.
In summary, the PHK13N03LT, 518 is a single field-effect transistor (FET) manufactured by Sumitomo Electric Industries that is ideal for a wide range of applications. This is due to its low on-resistance, low threshold voltage, and high current gain. It works by using an electric field to create a channel between its source and drain, which can be controlled by a gate voltage. This makes the FET ideal for controlled current regulation and provides a great deal of electrical control. It is used in low-voltage circuitry, high-power and high-speed switching, voltage regulation, amplifying applications, power management circuits and motor control devices.
The specific data is subject to PDF, and the above content is for reference
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