Allicdata Part #: | PHK31NQ03LT,518-ND |
Manufacturer Part#: |
PHK31NQ03LT,518 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 30.4A 8-SOIC |
More Detail: | N-Channel 30V 30.4A (Tc) 6.9W (Tc) Surface Mount 8... |
DataSheet: | PHK31NQ03LT,518 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.40656 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 6.9W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4235pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 4.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30.4A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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The PHK31NQ03LT,518 is a type of transistor typically categorized as a single type of field-effect transistor or FET. These transistors are increasingly used in many applications involving switching and amplification due to their unique electrical properties. This article will discuss the basic working principle and application field of this device as well as some of its unique characteristics.
At the most basic level, FETs are electrical components formed by a source and a drain connected to a gate. A voltage applied to the gate controls the current flow between the source and drain. When the gate voltage is low, current is unable to flow between the source and the drain. When the gate voltage is increased, current can flow between the source and drain. The PHK31NQ03LT,518 is a type of FET specifically designed to control high-frequency signals.
The PHK31NQ03LT,518 is often used in applications where a high degree of precision is required. It is well suited for applications such as high-frequency switching, noise cancellation, amplifier circuits, and others. Additionally, this device is often beneficial for applications requiring high input impedance and low capacitance. These features allow it to effectively control high-frequency signals with minimal distortion or losses.
The basic operation of the PHK31NQ03LT,518 is fairly straightforward. In order for current to flow between the source and drain, a voltage must be applied to the gate. This voltage can range from -3V to -8V. When the gate voltage is outside of this range, current will not flow between the source and the drain. Additionally, the PHK31NQ03LT,518 has a very low input capacitance, which means that it can effectively control high-frequency signals without introducing too much distortion.
The PHK31NQ03LT,518 is often used in a wide range of applications due to its superior performance. In particular, the device is well suited for high-frequency switching and amplifier circuits. Additionally, the low input capacitance allows the device to effectively control high-frequency signals with minimal distortion. Finally, the device is also beneficial for applications requiring high input impedance and low capacitance.
In conclusion, the PHK31NQ03LT,518 is a type of field-effect transistor that is well suited for applications involving high-frequency switching and amplification. It has a gate voltage range of -3V to -8V and a low input capacitance, allowing it to effectively control high-frequency signals with minimal distortion or losses. The device is also beneficial for applications requiring high input impedance and low capacitance. This device is increasingly used in many applications because of its superior performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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