PHM10030DLSX

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PHM10030DLSX is a high voltage N-Channel enhancement mode MOSFET, developed for switched mode power supplies and other applications requiring high speed switching, low range gate drive and low thermal resistance.

The PHM10030DLSX works in enhancement mode, which means it will turn on and off when appropriate gate drive signals are applied. When operating in enhancement mode, the MOSFET usually needs a voltage supply greater than the drain-source voltage, but this is not always the case depending on the required application. This type of MOSFET is designed to dissipate much less power than an electrical equivalent BJT.

The application fields of PHM10030DLSX can be divided into four categories. Firstly, it is widely used in a wide range of switched mode power supplies, such as switching AC-DC converters, DC-DC converters and current motor drivers. Secondly, its superior switching performance features such as extremely fast switching speeds, low on-resistance and low threshold drive voltage, make it a great choice for extremely demanding automotive, LED lighting and telecommunications switching applications. Thirdly, its low gate drive requirements and high blocking voltage make it ideal for clamping, buffering and other analog signal applications. Fourthly, with its low gate-source capacitance, low gate-drain capacitance and good edge speed, it is also commonly used to drive logic gates and other logic circuit applications.

The working principle of PHM10030DLSX is based on the metallic oxide semiconductor field effect (MOSFET) technology. This MOSFET is made up of two main components, the gate and the substrate. The gate terminal acts like a capacitance, whose electric field forms a barrier between the drain-source and the gate terminal as voltage is applied over the gate terminal. As the gate voltage increases, more electric field is formed and the flow of current from the drain-source is reduced smoothly. As more voltage is applied, the electric field completely blocks the current from the drain-source and the transistor is said to be “off”. On the contrary, when the gate voltage is reduced, the electric field disappears and the MOSFET will be “on” and current can flow freely from drain-source again.

In summary, PHM10030DLSX is a high voltage N-channel enhancement mode MOSFET, designed for a wide range of switched mode power supplies and other demanding applications requiring high speed switching, low range gate drive and low thermal resistance. Its working principle is based on the MOSFET technology, which is composed of two main components, the gate and the substrate, which form an electric field to control the current flow when voltage is applied over the gate terminal.

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