Allicdata Part #: | 1727-4638-ND |
Manufacturer Part#: |
PHP18NQ11T,127 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 110V 18A TO220AB |
More Detail: | N-Channel 110V 18A (Tc) 79W (Tc) Through Hole TO-2... |
DataSheet: | PHP18NQ11T,127 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.23787 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 633pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 110V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PHP18NQ11T FETs are commonly used in a wide variety of applications. These transistors are used in power supplies, audio amplifiers, switching and servo system, as well as other circuits. The PHP18NQ11T FETs are especially designed to handle higher voltages and currents with a high level of efficiency.
The PHP18NQ11T FETs are single Gate insulated gate FETs that are designed with MOS technology. This technology enables the transistors to operate with a low input capacitance, low gate threshold voltage and high source impedance. The source of the PHP18NQ11T transistors is protected against electrostatic discharge protection at the highest levels.
The single-gate FETs of PHPNQ11T have a built-in protection diode. This diode acts like a current limiter and it prevents the circuit from overloading and damage in case of an excessive current. Moreover, the Single gate FETs of the PHP18NQ11T provide high-speed switching performance with a low noise level.
The working principle of the PHP18NQ11T FETs is based on the application of an input voltage to the gate. This input voltage is applied to the gate, leading to the creation of an appropriate electric field. This electric field controls the current between the source and drain. A voltage applied to the gate will cause the current between the drain and the source to increase or decrease. This is dependent upon the nature of the electric field inside the transistor and the current will only flow through the transistor when the electric field is strong enough in order to allow a channel to form.
The PHP18NQ11T FETs are designed with a maximum drain-source voltage of 20V. In addition, the FETs also have a maximum current rating of 2A and a maximum power dissipation of 1.4 W. The PHP NQ11T transistors come with a breakdown voltage of 20V and a gate capacitance of 35pF. These features make the FETs ideal for use in switching, amplifier, and servo systems.
The PHP18NQ11T FETs are designed to provide high efficiency, low power consumption, and low noise performance. The high efficiency of the FETs makes them ideally suitable for a wide range of applications including power management, audio amplification and servo control. The low power consumption enables the FETs to be used in portable electronic devices, as well as in battery powered devices.
The FETs of the PHP18NQ11T series also provide high levels of noise immunity. This is due to the low gate threshold voltage of the FETs, which ensures low noise levels. The FETs also provide excellent switching performance with a high switching speed.
The PHP18NQ11T FETs are one of the most popular transistors available on the market and they are designed to provide high efficiency and low power consumption in a variety of applications. The transistors are compatible with a wide range of applications including switching and servo control, audio amplifiers, and power management. The PHP18NQ11T FETs also offer a high level of noise immunity and excellent switching performance.
The specific data is subject to PDF, and the above content is for reference
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