PHP28NQ15T,127

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1250pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 10V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	65 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	28.5A (Tj)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

PHP28NQ15T,127 is a single, N-Channel Enhancement Mode Field Effect Transistor (FET) which has a drain-source voltage of 28V, a drain current of 270mA, and a gate threshold voltage of 1.5V. It is typically used in a wide range of applications from switching, linear amplification, high-frequency conversions, and digital logic circuits.

Structure

PHP28NQ15T,127 contains two terminals; the drain and the source. The drain is a positive terminal and the source is a negative terminal. In the gate region, the gate voltage controls the current flow between the drain and source terminals. This type of transistor is a normally off type, in which the current flow between drain and source is zero until the gate voltage reaches a certain threshold value. Also, this transistor has an internal body diode between the drain and source terminals which is used to protect the device from over-voltage conditions. It also acts as a freewheeling diode in switching applications.

Working Principle

In a FET, the channel that allows current to flow between the drain and source is created by the electric field produced by the gate voltage. The channel acts like a variable resistor of resistance ‘r’. The resistance ‘r’ or the channel’s width is controlled by the gate voltage, which is the basis for its operation. When the gate voltage is less than the threshold voltage, the channel does not exist and there is no current flow between the drain and source terminals. When the gate voltage reaches the threshold voltage, the channel forms, and a drain current starts to flow. As the gate voltage is increased, the channel widens, increasing the conductivity and consequently increasing the drain current. Ideally, if the gate voltage is zero, the transistor should behave like an open switch. In this mode, the drain source current flow is zero, and drain source voltage is same as the supply voltage. As the gate voltage increase further, the transistor behaves like a variable resistor with its resistance depending on the gate-source voltage. A further increase of the gate-source voltage will fully turn on the FET and resulting in a low drain source resistance.

Applications

The PHP28NQ15T,127 is a single, N-Channel Enhancement Mode Field Effect Transistor which is used in a wide range of applications.

Switching Applications

It is widely used in switching applications due to its low current consumption and low power dissipation. The device can be operated in ON or OFF mode and can be used to switch between AC and DC signals. It can also be used as a relay driver or as a gate driving circuit.

Linear Amplification

Due to its high input impedance, it is also used as an amplifier in linear circuits. It can be used as a source follower to provide low output impedance and high input impedance.

High-Frequency Conversions

It is also used as a switching device in high-frequency conversions such as converters, power amplifiers, power supplies, transmitters and receivers, etc.

Digital Logic Circuits

The PHP28NQ15T,127 can be used as a switch for digital logic circuits such as switches, multiplexers, inverters, and latches.

Conclusion

In conclusion, PHP28NQ15T,127 is a single, N-Channel Enhancement Mode Field Effect Transistor which has a drain-source voltage of 28V, a drain current of 270mA, and a gate threshold voltage of 1.5V. It is typically used in a wide range of applications from switching, linear amplification, high-frequency conversions, and digital logic circuits. The device has an internal body diode between the drain and source terminals which is used to protect the device from over-voltage conditions, and it also acts as a freewheeling diode in switching applications. The device is useful due to its low current consumption and low power dissipation and can be used as a switch for digital logic circuits.

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