Allicdata Part #: | 1727-4648-ND |
Manufacturer Part#: |
PHP36N03LT,127 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 43.4A TO220AB |
More Detail: | N-Channel 30V 43.4A (Tc) 57.6W (Tc) Through Hole T... |
DataSheet: | PHP36N03LT,127 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.24755 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 57.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 690pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.5nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 43.4A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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PHP36N03LT is a single enhancement-mode MOSFET, which is a kind of three-terminal field-effect transistor. It is able to switch electrical signals and power and is a very good cost-effective choice for high-performance, miniaturized electronic applications. It can also be used to drive higher power loads with efficient power dissipation.
The three terminals are drain, source, and gate. A gate can control the level of the drain current, which significantly reduces the input capacitance and reduces power dissipation. The MOSFET is bidirectional and acts as a switched load, allowing it to function as an amplifier or switch depending on the application. These features make MOSFETs a very versatile component with a wide variety of applications.
PHP36N03LT is characterized by its low input capacitance and fast switching speeds, making it an ideal choice for high-speed switching and controlling applications. It has a voltage rating of 36V and a current rating of 3A, making it suitable for a wide range of applications. The device is also corrosion-resistant and has a wide operating temperature range.
In terms of application fields, PHP36N03LT can be used in a wide range of electronics, from automotive and audio/video applications to industrial and medical applications. It can be used in power supply regulation, liquid level detection, voltage controlled oscillators, and fan speed controllers, among numerous other applications. It is also well suited for analog signal conditioning and digital logic circuits.
The working principle of the PHP36N03LT is based on the property of the silicon-made MOSFET used in it, which is essentially an insulated-gate field-effect transistor. A voltage applied to the gate of the MOSFET creates an inversion layer on the surface near the gate in which electrons are pulled out of the silicon substrate. This inversion layer, known as the channel, links the source terminal to the drain terminal, allowing current to travel between the two. If the voltage applied to the gate exceeds the threshold voltage of the FET, the channel appears, allowing current to flow. As the voltage switches from above to below the threshold voltage, the channel disappears and the current flow stops.
In summary, PHP36N03LT is a single enhancement-mode MOSFET with low input capacitance, fast switching speeds, and wide operating temperature range. It is suitable for a variety of applications, such as automotive and audio/video applications, and works on the principle of creating an inversion layer, known as the channel, on the surface near the gate in the MOSFET. This inversion layer links the source and drain terminals, allowing current to flow between them.
The specific data is subject to PDF, and the above content is for reference
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