PMBT4401,185 Allicdata Electronics
Allicdata Part #:

PMBT4401,185-ND

Manufacturer Part#:

PMBT4401,185

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 40V 600MA SOT236-3
More Detail: Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 250m...
DataSheet: PMBT4401,185 datasheetPMBT4401,185 Datasheet/PDF
Quantity: 1000
30000 +: $ 0.01096
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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The PMBT4401,185 is a general-purpose single bipolar junction transistor (BJT) to be used in a variety of applications. It is an NPN-type device, meaning it has two N-type regions (emitter and collector) sandwiching an P-type (base) region. This transistor is ideal for use in switching, amplification and current sensing applications, due to its ability to control current and voltage.

By controlling current and voltage, the PMBT4401,185 can be used for various applications such as low-noise amplifiers, audio amplifiers, switches and saturated switching circuits. It is also suitable for use in a wide range of consumer electronic devices such as cellphones, radios and televisions. Additionally, the device can be used in triggering and interfacing circuits, where it can be switched either in a linear or saturated mode.

The PMBT4401,185 works based on the principles of bipolar junction transistors. This particular transistor has three terminals or ‘junctions’ – the emitter, collector and base. The emitter and collector terminals have specially doped layers that give them their respective N-type or P-type signatures. The base terminal then acts as a controlling junction, which when forward-biased, allows current to pass from the collector to the emitter. By controlling how much current is allowed to flow from the collector to the emitter, the transistor can be used for various applications.

In addition to controlling current, the transistor can also be used for controlling the gain of an amplifier by manipulating the base current. This is due to the fact that the amount of current flowing from the collector to the emitter is proportional to the amount of current flowing from the base to the collector. By changing the base current, the amount of current flowing from the collector to the emitter can be altered, thus allowing the gain of an amplifier to be controlled.

The PMBT4401,185 also has the advantage of being able to operate at a wide range of temperatures and frequencies. This makes it an ideal choice for a variety of design requirements. Furthermore, the device is able to handle a large range of currents, making it suitable for use in high-power applications.

In conclusion, the PMBT4401,185 is a versatile single bipolar junction transistor that can be used in a variety of applications. It can be used to control current and voltage, trigger and interface circuits, control amplifier gain and for applications that require operation at a wide range of temperatures and frequencies. Additionally, the device can handle a large range of currents, making it suitable for high-power applications.

The specific data is subject to PDF, and the above content is for reference

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