PMBT6429,215 Allicdata Electronics
Allicdata Part #:

1727-5182-2-ND

Manufacturer Part#:

PMBT6429,215

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN 45V 0.1A SOT23
More Detail: Bipolar (BJT) Transistor NPN 45V 100mA 700MHz 250m...
DataSheet: PMBT6429,215 datasheetPMBT6429,215 Datasheet/PDF
Quantity: 6000
3000 +: $ 0.01855
6000 +: $ 0.01674
15000 +: $ 0.01455
30000 +: $ 0.01310
75000 +: $ 0.01164
150000 +: $ 0.00970
Stock 6000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Power - Max: 250mW
Frequency - Transition: 700MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: PMBT6429
Description

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Transistors have become an integral part of almost every electronic system today. They are used as amplifiers, oscillators, switches, signal processors, logic gates and other circuit components. The PMBT6429,215 Bipolar Junction Transistor (BJT) is a single-junction, high-performance transistor which has been designed for general purpose applications, offering excellent reliability and stability.

The PMBT6429,215 incorporates an advanced process technology which provides it with fast switching, low power consumption and high power gain characteristics. It is well suited for use in a variety of applications, from low-power battery-powered devices to large-scale industrial power control systems.

The PMBT6429,215 is designed as a NPN type transistor, where the collector is made up of three layers: one N-type layer and two P-type layers. The emitter is also constructed from three layers: one P-type layer and two N-type layers. This combination allows the PMBT6429,215 to provide high gain performance and low saturation current even when operated at very high collector-to-emitter currents.

One of the most common applications of the PMBT6429,215 is power regulation. As a general purpose device, it is excellent for use in switching power supplies and motor control circuits, where fast switching and excellent linearity are essential. It is also suitable for use as a relay driver, as its size and low power requirements make it well suited for these applications.

The working principle of the PMBT6429,215 is based on the PN junction formed between its N and P layers. When a positive voltage is applied to the base, electrons from the N-layer are attracted towards the P-layer. This creates a current flow from the collector to the emitter and produces a high power gain. The strength of the collector current is determined by the voltage applied to the base, and can be increased by increasing the voltage.

The PMBT6429,215 can also be used as a switch, as the current flow between the collector and emitter can be switched off by simply removing the voltage applied to the base. This makes it a very reliable switching device, as it can be used to control an entire circuit.

Another application of the PMBT6429,215 is in signal processing circuits. It can be used to amplify weak signals in order to make them detectable and to improve their accuracy. By changing the voltage applied to the base, the output signal can be accurately modulated.

The PMBT6429,215 is also used as a logic gate in digital circuits. It acts like an AND gate which produces an output only when both of its inputs are high. It is also used as a NOT gate where an inverted version of the input signal is produced as an output.

The PMBT6429,215 is a versatile device which can be used in applications ranging from power regulation to signal processing. Its advanced process technology provides excellent reliability and linearity, making it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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