PMBT5550,235

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	300mA
Voltage - Collector Emitter Breakdown (Max):	140V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 10mA, 5V
Power - Max:	250mW
Frequency - Transition:	300MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	PMBT5550

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The PMBT5550,235 is a single bipolar junction transistor (BJT) that is typically used in Amplifier, Audio and Microphone applications. It offers a wide range of features, such as low Current Gain, low Collector-Base Voltage, low Base-Emitter Voltage, and low Collector-Emitter Voltage. The PMBT5550,235 has a maximum Collector-Emitter Saturation Voltage of 2 V and can handle up to 210 mA of peak Collector Current.The bipolar junction transistor (BJT) is an active semiconductor device that is used as an amplifying, switching, and current-limiting device. It consists of two p-n junctions, base and emitter, and n-type and p-type semiconductor regions. A BJT can operate in either the active, saturation, or cut-off regions, and its operation is based on the current gain, base-emitter and collector-emitter voltages.The PMBT5550,235 provides an amplification factor of 200. This is achieved through its low current gain hFE which ranges from 110 to 330. The base-emitter voltage is 7.0 V and the collector-base voltage is 70 V. In addition, the collector-emitter satuation voltage is 2.0 V and the peak collector current is 210 mA.In the active region, the input current is amplified, while in the saturation region, the collector current is much greater than the base current. When the BJT is in the cut-off region, no current flows through the transistor. The collector-emitter voltage is 0, and the transistor is turned off.The PMBT5550,235 is most commonly used in amplifier applications. When used as an amplifier, the BJT is connected to a voltage source, with the collector-emitter voltage connected directly to a load. When a higher voltage is applied, the current gain hFE increases, causing the collector current to increase. This increased current is then used to drive the load, allowing for more power to be outputted.The PMBT5550,235 is also used in audio applications, often as part of a microphone. When used as a microphone, the BJT is connected to a sound source and the output of the transistor is connected to an amp. The sound source causes a small current to flow through the emitter-base junction, and this current is amplified by the BJT. The resulting amplified signal is used to drive the amp and then the output of the amp is used to power the loudspeaker.In summary, the PMBT5550,235 is a single bipolar junction transistor (BJT) that is typically used in Amplifier, Audio, and Microphone applications. It offers a wide range of features, such as low Current Gain, low Collector-Base Voltage, low Base-Emitter Voltage, and low Collector-Emitter Voltage. In addition, it has a maximum Collector-Emitter Saturation Voltage of 2 V and can handle up to 210 mA of peak Collector Current. The amplifier will increase the current gain and allow for increased power output from the load. Furthermore, it can be used as part of a microphone, where it will amplify the sound source.

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