PMBT3946YPN,115 Allicdata Electronics
Allicdata Part #:

1727-5180-2-ND

Manufacturer Part#:

PMBT3946YPN,115

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN/PNP 40V 0.2A 6TSSOP
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA ...
DataSheet: PMBT3946YPN,115 datasheetPMBT3946YPN,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03905
6000 +: $ 0.03396
15000 +: $ 0.02887
30000 +: $ 0.02717
75000 +: $ 0.02547
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 350mW
Frequency - Transition: 300MHz, 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP, SC-88
Base Part Number: PMBT3946YPN
Description

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PMBT3946YPN,115 is a type of transistor array included within the category of transistors known as bipolar junction transistors (BJT). These transistors are two-terminal semiconductor devices which are complementary, and enable the construction of highly efficient digital logic circuits or amplifiers that use less power than single discrete component transistors. The PMBT3946YPN,115 is a medium power digital transistor array, which is moderatly complex in its composition, and is part of a family of devices with the PMBT prefix.

The 115 suffix of this device denotes that the device has an operating temperature range of -55 °C to +150 °C - that is, this transistor array is designed for use in extremely harsh operating environments, making them suitable for space applications, weapons systems, and medical instruments.This transistor array is also RoHS compliant, which states that each component of the device meets the requirements of reduced hazardous substances. This can be proven by the additional suffix of 5P.The layout of the PMBT3946YPN,115 is relatively simple, containing two NPN transistors, one PNP transistor, three diodes and two resistors in series. The resistor values are held constant at 10KΩ, but the two transistors and three diodes can be used in either an NPN configuration, or PNP configuration, depending upon the requirements of the circuit.

The main application range of PMBT3946YPN,115 is in high-speed digital circuits. The NPN transistors are intended to be used as drivers of peripheral devices such as a solenoid, a loudspeaker, or other inductive load. The PNP transistor can be used as the output stage of an amplifier, or as an emitter follower. The diode can be used for protection circuits, super-regenerative receivers, and switching circuits.

The working principle of this transistor array is fairly simple. As with any BJT circuit, the gate voltage (Vgs) will turn the device ON or OFF, according to the requirements of the circuit.In a PNP configuration, the PNP transistor will be used as a current source. A voltage applied to the gate of the PNP transistor will turn it ON, allowing the voltage applied at the source of the PNP transistor to be passed to the collector.In an NPN configuration, the NPN transistors are used as a current sink. A voltage applied to the gate of the NPN transistor will turn it OFF, allowing the voltage applied at the collector of the NPN transistor to be passed to the source.The diodes will then determine the polarity of the current passing through the device. Depending on the direction of the current, one or more of the diodes will be turned ON, allowing the current to flow in the desired direction.

The PMBT3946YPN,115 is a versatile and reliable transistor array, which is ideal for use in high-speed digital circuits and amplifiers. Despite its complex construction, the device is fairly easy to use, and can be employed in a wide variety of circuits that require high-performance transistors for low power operation.

The specific data is subject to PDF, and the above content is for reference

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