Allicdata Part #: | 1727-2684-2-ND |
Manufacturer Part#: |
PMBT4403,235 |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 40V 0.6A SOT23 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 250m... |
DataSheet: | PMBT4403,235 Datasheet/PDF |
Quantity: | 10000 |
10000 +: | $ 0.01217 |
30000 +: | $ 0.01096 |
50000 +: | $ 0.00974 |
100000 +: | $ 0.00913 |
250000 +: | $ 0.00811 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 2V |
Power - Max: | 250mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
Base Part Number: | PMBT4403 |
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The PMBT4403,235 is a Transistor - Bipolar (BJT) - Single primarily used in power appliance design. It is designed for the highest levels of current and power ratings, making it an ideal choice for applications such as electronic control systems, power supplies and power conversion. Additionally, its low noise and excellent thermal stability make it a reliable choice for use in any situation.
The PMBT4403,235 is designed for use with medium to high voltage and current levels and features high-voltage isolation between the collector and base. This isolation allows for increased efficiency in high-current operations. Additionally, it features protection and current limits to ensure that it can tolerate high current levels. This feature is particularly useful in applications where there is a need for reliable and consistent operation.
The PMBT4403,235’s working principle is based on the principle of a junction transistor. A junction transistor is the basic structure of a bipolar junction transistor (BJT), in which two diodes are connected between two electrodes, the emitter and the collector, with the base electrode being the control electrode. When the base voltage is increased, an electric current flows between the collector and emitter, allowing the transistor to act as an amplifier or switch. This type of transistor is used in many applications due to its ability to amplify or switch currents.
The PMBT4403,235 is designed to operate at very high currents, making it ideal for applications where high currents are required. This is especially true for power supplies, control systems and power conversion systems. Additionally, its low noise and excellent thermal stability make it an excellent choice for use in any applications, but especially those requiring high currents. Furthermore, it provides isolation between the collector and base to further enhance its reliability in operation.
The PMBT4403,235 is a highly reliable and sturdy transistor that is suitable for use in many power-related applications. Its low noise and excellent thermal stability make it an ideal choice for use in any situation where high current levels are required. Additionally, its protection and current limits, as well as its high-voltage isolation, make it a dependable and reliable choice for any application.
The specific data is subject to PDF, and the above content is for reference
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