PML260SN,118 Allicdata Electronics

PML260SN,118 Discrete Semiconductor Products

Allicdata Part #:

1727-7220-2-ND

Manufacturer Part#:

PML260SN,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 200V 8.8A 8HVSON
More Detail: N-Channel 200V 8.8A (Tc) 50W (Tc) Surface Mount DF...
DataSheet: PML260SN,118 datasheetPML260SN,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: DFN3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 657pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 294 mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PML260SN,118 is a type of Field Effect Transistor (FET) specifically a Metal Oxide Semiconductor FET (MOSFET). It is a single type MOSFET which is constructed of two opposing layers of doped silicon material that when polarized with an electric signal yields a transistors output. PML260SN,118 is a type of switching device that is commonly used in analog and digital circuits for applications that require voltage regulation or current control. PML260SN,118 is a versatile component with the ability to be used in a wide variety of applications.

The process of constructing a MOSFES starts with a silicon semiconductor material which is usually n-type silicon but sometimes p-type silicon is used. Two opposing layers of silicon material are then doped with additional positively and negatively charged particles. The positively and negatively charged particles create a space between the layers known as the insulating layer or gate oxide, this is where the electric signal will be sent to control the transistor state. The next layer is the gate or control electrode. When a voltage is applied to the gate, it controls the current going through the other layers of the transistor. When no voltage is applied, the transistor is in its off-state, known as the cutoff state; an applied voltage turns it on and puts it in its saturation state.

The controlling electric signal would be supplied by a voltage source, current source, microprocessor or other component.The distinguishing factor for PML260SN,118, though, is its ability to handle a wide range of voltages.The high voltage and large current ratings allow it to be used in many applications such as switching circuits, voltage regulation, current control and other high-power applications. It also has a high breakdown voltages which makes it ideal for use in sensitive circuits. Due to its wide range of characteristics, PML260SN,118 can be used in many different types of circuits. It is by far the most versatile type of MOSFET transistor below the industrial grade.

Another key feature of PML260SN,118, is its ability to switch between the off and on states in a very short amount of time. This makes it perfect for use in digital circuits.Because of the very low capacitance of PML260SN,118,it requires very little power to switch, making it ideal for battery powered and low power applications.

In conclusion, PML260SN,118 is a versatile type of metal oxide semiconductor (MOSFET) transistor that is used in a wide variety of applications. It can be used to switch circuits, regulate voltage and current, and control high-power circuits. It has high electrical breakdown voltages, a wide range of voltage ratings, and a low capacitance so it can switch quickly and use less power. For these reasons, PML260SN,118 is a widely used single type MOSFET transistor.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "PML2" Included word is 1
Part Number Manufacturer Price Quantity Description
PML260SN,118 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 200V 8.8A 8HV...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics