PML260SN,118 Discrete Semiconductor Products |
|
Allicdata Part #: | 1727-7220-2-ND |
Manufacturer Part#: |
PML260SN,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 200V 8.8A 8HVSON |
More Detail: | N-Channel 200V 8.8A (Tc) 50W (Tc) Surface Mount DF... |
DataSheet: | PML260SN,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | DFN3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 657pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13.3nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 294 mOhm @ 2.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PML260SN,118 is a type of Field Effect Transistor (FET) specifically a Metal Oxide Semiconductor FET (MOSFET). It is a single type MOSFET which is constructed of two opposing layers of doped silicon material that when polarized with an electric signal yields a transistors output. PML260SN,118 is a type of switching device that is commonly used in analog and digital circuits for applications that require voltage regulation or current control. PML260SN,118 is a versatile component with the ability to be used in a wide variety of applications.
The process of constructing a MOSFES starts with a silicon semiconductor material which is usually n-type silicon but sometimes p-type silicon is used. Two opposing layers of silicon material are then doped with additional positively and negatively charged particles. The positively and negatively charged particles create a space between the layers known as the insulating layer or gate oxide, this is where the electric signal will be sent to control the transistor state. The next layer is the gate or control electrode. When a voltage is applied to the gate, it controls the current going through the other layers of the transistor. When no voltage is applied, the transistor is in its off-state, known as the cutoff state; an applied voltage turns it on and puts it in its saturation state.
The controlling electric signal would be supplied by a voltage source, current source, microprocessor or other component.The distinguishing factor for PML260SN,118, though, is its ability to handle a wide range of voltages.The high voltage and large current ratings allow it to be used in many applications such as switching circuits, voltage regulation, current control and other high-power applications. It also has a high breakdown voltages which makes it ideal for use in sensitive circuits. Due to its wide range of characteristics, PML260SN,118 can be used in many different types of circuits. It is by far the most versatile type of MOSFET transistor below the industrial grade.
Another key feature of PML260SN,118, is its ability to switch between the off and on states in a very short amount of time. This makes it perfect for use in digital circuits.Because of the very low capacitance of PML260SN,118,it requires very little power to switch, making it ideal for battery powered and low power applications.
In conclusion, PML260SN,118 is a versatile type of metal oxide semiconductor (MOSFET) transistor that is used in a wide variety of applications. It can be used to switch circuits, regulate voltage and current, and control high-power circuits. It has high electrical breakdown voltages, a wide range of voltage ratings, and a low capacitance so it can switch quickly and use less power. For these reasons, PML260SN,118 is a widely used single type MOSFET transistor.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
PML260SN,118 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 200V 8.8A 8HV... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...