PML340SN,118

Transistors - FETs, MOSFETs - Single

The PML340SN,118 is a single P-channel MosFET (Metal Oxide Semiconductor Field Effect Transistor). It is a power MOSFET device specially designed for low voltage operating devices in small-signal switching and linear applications. The PML340SN,118 is an enhancement mode device, which is used for switching and amplifying capabilities.

Application Fields

PML340SN,118 is suitable for a broad range of applications which require low voltage and low consumption power devices, such as mobile phones, laptops and tablets, as well as industrial and automotive applications.

In addition, it can be used for motor control, power management, AC/DC converters, low dropout regulators, battery operated circuits, and other high-value, low-voltage applications such as bus-powered peripheral devices. Its performance benefits include low power consumption, fast switching, small form factor, high reliability, and high performance for a variety of applications.

PML340SN,118 can also be used in small-signal analysis, such as closed loop amplifiers and frequency response tests. This device can also be used in high-pressure environments and to control high-current applications.

Working Principle

The PML340SN,118 is a P-channel MOSFET that works on the principle of the charge carrier inversion. This device has a gate terminal, a source terminal, and a drain terminal. The gate terminal is used to control the current passing between the source and drain terminals. When the voltage at the gate terminal is higher than the threshold voltage, a gate reverse bias voltage is applied. This gate reverse bias voltage causes the majority carriers in the channel to separate and an inversion layer is formed. This inversion layer is important for current conduction through the channel.

When a positive voltage is applied to the gate terminal, an electric field is created by the gate voltage, which attracts electrons from the metal gate to the semiconductor. These electrons increase the conductivity of the channel by forming an electron depletion layer and increasing the number of available charge carriers.

The PML340SN,118 is an enhancement mode device, meaning that it\'s conduction is completely dependent on the gate load. When no load is applied to the gate, the PML340SN,118 has a very low on Resistance. When the gate load is increased, the PML340SN,118 reduces the on Resistance and increases the current flow through the device.

The PML340SN,118 has an operational voltage range of between 1 V and 20 V, making it suitable for a broad range of applications. It is able to handle currents of up to 5 A and has a maximum drain-source voltage of 20 V. It is able to dissipate up to 150 mW of power and is available in an SO-8 package.

Conclusion

The PML340SN,118 is a single P-channel MosFET that is specially designed for low voltage applications in small-signal and linear analysis. It is suitable for a broad range of applications, including power management, AC/DC converters, motor control, and low dropout regulators. It has an operational voltage range of 1 V to 20 V and can handle currents up to 5 A, with a maximum drain-source voltage of 20 V. The PML340SN,118 is an enhancement mode device and has a very low on resistance when no load is applied to the gate.