PMN80XP,115

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The PMN80XP,115 is a type of single power metal oxide semiconductor field effect transistor (MOSFET). This MOSFET is ideal for applications with high current, low voltage, and low noise. This device has a maximum drain current rating of 80A, a total gate charge of 115 nC, a breakdown voltage of 64V, and an on-resistance rating of less than 1.2 ohms.The PMN80XP,115 MOSFET is a popular choice among engineers because of its ability to reliably and efficiently switching large currents. It is also a good choice for applications that require low noise operation. This device has the advantage of low power consumption and low output capacitance.

The PMN80XP,115 is typically used to control DC power in a wide variety of applications. It is often used in motor control, DC-DC converters, power supplies, hot-swap circuits, switch mode power supplies, battery management systems, and audio amplifiers. This device can also be used for frequency and pulse width modulation in audio systems and motor control systems. This MOSFET is used most commonly in automotive and industrial applications, because it is capable of switching large currents in harsh environments.

The PMN80XP,115 is a N-channel MOSFET, which means that current flows through the source (S) to the drain (D) when the gate (G) voltage is higher than the source voltage. This device has a number of advantages over other FETs, including a low on resistance and a low gate capacitance. This MOSFET has a very low input capacitance, which helps reduce output power ringing. This makes it ideal for high frequency applications.This MOSFET also has a very low shot noise and low switching losses.

The PMN80XP,115 is a very reliable device, with an operating temperature range of -55C to +175C. This device has a drain-to-source breakdown voltage of 64V and a maximum drain current rating of 80A. This MOSFET is an ideal choice for controlling large currents in a wide variety of applications, from motor control to power supplies.

In conclusion, the PMN80XP,115 is a reliable and efficient N-channel MOSFET. It is suitable for controlling large currents in a wide range of applications. This device has a maximum drain current rating of 80A and a maximum breakdown voltage of 64V. It is particularly well suited for applications that require low power consumption, low output capacitance, and low noise operation.

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