
Allicdata Part #: | 1727-2312-2-ND |
Manufacturer Part#: |
PMV75UP,215 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 20V 2.5A |
More Detail: | P-Channel 20V 2.5A (Ta) 490mW (Ta) Surface Mount T... |
DataSheet: | ![]() |
Quantity: | 6000 |
3000 +: | $ 0.07420 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 490mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 102 mOhm @ 2.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PMV75UP,215 is a single N-Channel enhancement-mode vertical DMOS field effect transistor (FET). It is suitable for a wide range of applications in automotive, mobile equipments, home appliances, and other industrial control systems.
A field effect transistor (FET) is a type of transistor in which the conductivity of a channel of a semiconductor, such as silicon, is controlled by an electric field. The PMV75UP,215 is an enhancement-mode FET, meaning that the channel is normally off, making it ideal for switch and level shifting applications. In order for the transistor to conduct, a positive gate-source voltage must be applied.
The PMV75UP,215 is designed for use in applications requiring low on-resistance, low gate charge, high switching speed, and low-voltage operation. It features a drain-source breakdown voltage of 55V and an on-resistance of < 10 ohms.
This device is designed for use in low-side and high-side switch applications as well as level-shifting applications. It is capable of switching up to 5A of current and can operate at a frequency of up to 1MHz. It has a wide range of packages available to suit different application needs.
The PMV75UP,215 is a reliable and efficient device that can be used in a wide range of applications, such as automotive, industrial, and communications. It is suitable for use in switching, level-shifting, and other automotive, industrial, and communications applications.
The PMV75UP,215 is a highly efficient N-Channel FET with a low on-resistance and threshold voltage that makes it an excellent choice for applications requiring low power and fast switching speeds. It is also designed for use in automotive and industrial control systems, providing reliable operation even in harsh environments.
The PMV75UP,215 is a cost-effective device that provides reliable operation and high performance. It is well suited for applications that require low power and high switching speeds. It is also designed with low gate charge and high transconductance, enabling it to operate in low-side and high-side switch applications.
The PMV75UP,215 is a superior single N-Channel enhancement-mode vertical DMOS FET designed for a wide range of applications. With its low on-resistance and threshold voltage, it offers reliable and efficient operation in automotive, industrial, and communications systems. It is also designed for low-side and high-side switch applications as well as level-shifting applications, providing excellent performance and reliability.
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Part Number | Manufacturer | Price | Quantity | Description |
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PMV75UP,215 | Nexperia USA... | 0.08 $ | 6000 | MOSFET P-CH 20V 2.5AP-Cha... |
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