PMZ350UPEYL Allicdata Electronics
Allicdata Part #:

1727-2320-2-ND

Manufacturer Part#:

PMZ350UPEYL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET P-CH 20V 1A
More Detail: P-Channel 20V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surf...
DataSheet: PMZ350UPEYL datasheetPMZ350UPEYL Datasheet/PDF
Quantity: 10000
Stock 10000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 950mV @ 250µA
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 127pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 450 mOhm @ 300mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PMZ350UPEYL is a single P-channel enhancement-mode field-effect transistor (FET) designed for use in low-voltage, low-power, and high-performance switching applications. Its all-silicon, epitaxially-grown monolithic structure is specifically adapted for use in systems such as automotive, communications, industrial, and medical applications.

The PMZ350UPEYL\'s main advantage is its small size and low-power operation, which makes it a good choice for space-constrained and/or low-power applications. Because the PMZ350UPEYL has an enhancement-mode operation, it can be driven by either a PWM signal or a digital logic signal. This makes it suitable for a wide range of applications, from digital switching to speed control.

The PMZ350UPEYL is a very good example of a single-channel MOSFET. It has the standard three-terminal configuration, with a gate terminal for controlling the FET\'s operation, a source terminal for connecting the device to the power supply, and a drain terminal for connecting the device to the load. The device also has a small body-diode that can be used for reverse-current protection in manual applications.

The PMZ350UPEYL is designed for high-performance switching applications that require very small power consumption and minimal power dissipation. The device has a very low on-resistance rating of typically 0.01 ohm, a low source-drain capacitance, and a very low gate-to-drain capacitance. All of these features contribute to its low-power performance.

The PMZ350UPEYL has a wide range of working voltages and currents, from -5V to +5V and from -1A to +1A. This allows the device to be used in a variety of applications, from motor control to power management. The device also has an operating temperature range of -55°C to +125°C and a junction temperature range of -55°C to +150°C, which makes it suitable for use in temperature-sensitive applications.

The PMZ350UPEYL\'s working principle is based on the same principle of operation that applies to all enhancement-mode FETs. When the gate voltage is higher than the source voltage, a channel forms between the source and drain terminals and current begins to flow. The amount of current that flows is controlled by the amount of gate voltage applied, and this can be used to control the speed of the motor or the amount of power delivered to the load.

The PMZ350UPEYL is a reliable and low-power FET that is well-suited for a variety of high-performance switching applications. It has an excellent on-resistance rating, low capacitance, and wide voltage and current ranges, which all make it a good choice for demanding applications. Its small size and low-power operation make it an ideal choice for space-constrained applications, and its wide operating temperature range makes it suitable for temperature-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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