PMZ600UNEYL Allicdata Electronics
Allicdata Part #:

1727-2323-2-ND

Manufacturer Part#:

PMZ600UNEYL

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 20V 0.6A
More Detail: N-Channel 20V 600mA (Ta) 360mW (Ta), 2.7W (Tc) Sur...
DataSheet: PMZ600UNEYL datasheetPMZ600UNEYL Datasheet/PDF
Quantity: 30000
10000 +: $ 0.04985
Stock 30000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 950mV @ 250µA
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PMZ600UNEYL Application Field and Working Principle

The PMZ600UNEYL is a unique type of power metal-oxide semiconductor field-effect transistor (MOSFET), which is a type of field-effect transistor (FET). It belongs to a group of FETs known as "single-gate", which is a kind of field-effect transistor, that has a single gate that controls the flow of electrons through an insulated gate between the source and drain. This type of transistor can be used in many different applications, including power supplies, motor control and telecommunications.

The PMZ600UNEYL is a very low on-resistance-type power MOSFET with relatively high current ratings, making it well suited for applications where large currents are needed. This device has a drain-source voltage rating of 1000V, with a current rating of 100A, making it suitable for many applications with high power requirements. The drain-source on-resistance is also very low, around 3 milliohms, allowing it to handle large current demands while maintaining high efficiency.

The PMZ600UNEYL has a wide variety of uses. It can be used in many types of power supplies and motor control. In motor control, it can be used for speed, direction and current control. In power supplies it can be used for controlling and switching power sources, as well as for regulating power and current. It is also suitable for use in telecommunications applications, such as base station transmitters, and can be used to control signal levels in base station amplifiers.

The working principle of the PMZ600UNEYL is very similar to other FETs, as it utilizes three different terminals for connecting the signal. The source is the first terminal, which applies bias voltage to the gate, activating the source voltage and allowing current to flow between the source and drain. The gate is the second terminal, which is connected to the drain, controlling the amount of current that can flow through the channel. The last terminal is the drain, which allows electrons to exit the device. The MOSFET works by allowing the current to flow either way, depending on the voltage applied to the gate. If the voltage is positive, then the electrons will flow away from the source, which is known as the "on" state. If the voltage is negative, then the electrons will flow back to the source, which is known as the "off" state.

The PMZ600UNEYL is a very versatile device and can be used in a wide range of applications. It is a great choice for applications that require high current with low power losses. This type of transistor is also very efficient, as it can handle large current demands with a very low on-resistance rating. This makes it ideal for applications that need to switch large amounts of current without causing excessive power losses.

The specific data is subject to PDF, and the above content is for reference

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