PTAB182002FC-V1-R0

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	1.88GHz
Gain:	15.5dB
Voltage - Test:	28V
Current Rating:	10µA
Noise Figure:	--
Current - Test:	520mA
Power - Output:	29W
Voltage - Rated:	65V
Package / Case:	H-37248-4
Supplier Device Package:	H-37248-4

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Introduction to PTAB182002FC-V1-R0

PTAB182002FC-V1-R0 is a type of Field-Effect Transistor (FET) that has been developed primarily for use in radio-frequency (RF) applications. It is a silicon-based, low-noise, low-frequency FET that is capable of working over a wide frequency range. The FET is constructed with two pins, called a drain and source, and works by generating an electric field which can be used to control the current flow between the two pins in the device. It has been found to be especially useful in applications such as power amplifiers, oscillators, and other sensitive devices.

Basic Electrical Characteristics

The electrical characteristics of the PTAB182002FC-V1-R0 include an operating voltage of 10 volts (V) and a maximum voltage of 15V. The drain-source capacitance is typically around 33pF, making it relatively low compared to other FETs. It also has a very low on-resistance of 0.1 ohms. The FET also has a breakdown voltage of 25V, which is quite high compared to other FETs. Finally, its capacitance-voltage (C-V) curve is fairly linear, suggesting that it is well-suited for use in RF applications.

Applications

The PTAB182002FC-V1-R0 FET has a wide range of applications in radio-frequency electronics depending on its electrical characteristics. It can be used in power amplifiers, oscillators, filters, and other sensitive devices. For example, the FET can be used in RF amplifiers where low noise and low distortion are desired. Additionally, it can be used in oscillators for short-range wireless transmission, as well as filters for signal conditioning and noise reduction.

Working Principle

The PTAB182002FC-V1-R0 operates based on the principle of electric-field control. An electric field is generated at the FET\'s gate terminal when a voltage is applied to it. This electric field interacts with the charge carriers (electrons and holes) in the channel of the FET. The interaction between the electric field and the charge carriers causes a current to flow through the device, which can be controlled by varying the voltage applied to the gate.

Conclusion

The PTAB182002FC-V1-R0 is a silicon-based, low-noise, low-frequency FET that is capable of operating over a wide frequency range. It has a wide range of applications in radio-frequency electronics, and its low on-resistance and high breakdown voltage make it well-suited for use in power amplifiers, oscillators, filters, and other sensitive devices. Additionally, its working principle is based on electric-field control and is capable of generating a current flow between the drain and source of the device.

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