Allicdata Part #: | PTAB182002TCV2R250XUMA1-ND |
Manufacturer Part#: |
PTAB182002TCV2R250XUMA1 |
Price: | $ 58.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC AMP RF LDMOS |
More Detail: | RF Mosfet |
DataSheet: | PTAB182002TCV2R250XUMA1 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 52.89990 |
Series: | * |
Part Status: | Active |
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PTAB182002TCV2R250XUMA1 is a surface-mounted MOSFET transistor developed by Philips Semiconductor, the company that created the P-channel MOSFET. It is designed to have low on-state resistance and to provide exceptional stability and ruggedness in switching applications. This type of transistor is mainly used in high-frequency radio communications (RF) circuits.
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are devices that can amplify electrical signals or be used as electronic switches. They are considered to be voltage-controlled devices because their output is dependent upon the input voltage that is applied to the gate terminal. MOSFETs come in two distinct types, n-channel and p-channel devices, with the PTAB182002TCV2R250XUMA1 belonging to the latter.
The PTAB182002TCV2R250XUMA1 transistor operates under both digital and analog signals, depending upon the type of circuit it is used in. In digital circuits, it acts as a switch which is controlled by the input voltage applied to its gate. The PTAB182002TCV2R250XUMA1 is designed to have low on-state resistance, which ensures that the circuit has a small amount of current leakage when it is in the "off" state. This low on-state resistance also has the advantage of reducing power dissipation and improving efficiency.
The PTAB182002TCV2R250XUMA1 is also designed to have exceptional stability and ruggedness in switching applications. Philips Semiconductor has integrated advanced ESD protection into the transistor, meaning that it can handle electrostatic surges up to 8 kilovolts without any damage. This feature makes it suitable for positioning in high-voltage environments or circuits. In addition, the integrated ESD protection also helps to protect the transistor from any minor overvoltages.
The PTAB182002TCV2R250XUMA1 is mainly used in radio frequency (RF) circuits, such as telecommunication systems, ham radio, and amateur radio. The device is also suitable for use in other high-frequency applications, including audio circuits, antenna systems, and wireless charging.
Overall, the PTAB182002TCV2R250XUMA1 is an ideal transistor for RF applications which require high reliability, low on-state resistance, and excellent stability. With its integrated ESD protection and low power dissipation, it is an ideal choice for various applications that require robust and efficient performance.
The specific data is subject to PDF, and the above content is for reference
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