| Allicdata Part #: | PTAB182002TCV2XWSA1-ND |
| Manufacturer Part#: |
PTAB182002TCV2XWSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IC RF FET LDMOS 190W H-49248H-4 |
| More Detail: | RF Mosfet |
| DataSheet: | PTAB182002TCV2XWSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
。The PTAB182002TCV2XWSA1 is an integrated semiconductor device specially designed for Radio Frequency (RF) applications. This device includes an Advanced MOSFET Technology that combines the features of a FET (Field-Effect Transistor) and a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) in a single package. This device is used to regulate and amplify high frequency signals to power a variety of RF products ranging from cellular phones to wireless controllers.
FETs and MOSFETs are electrical components that are used to control electricity. FETs are unipolar electronic components that use three terminals to control electrical current. They are voltage-controlled devices that can be used to amplify, regulate and/or switch electrical signals. FETs can be used to construct amplifiers, switches, voltage regulators and other circuits. MOSFETs are transistors that are used in the same way as FETs, but they are more advanced. They are usually finer and more compact than traditional FETs since they are composed of a number of transistors. Approaching the limits of miniaturization, MOSFETs can be used to replace several FETs in a single package.
The PTAB182002TCV2XWSA1 integrates FET and MOSFET technologies to further reduce size and increase efficiency. This device was specifically designed for RF applications, making it ideal for products such as cell phones and wireless controllers. By combining the features of both FETs and MOSFETs, this device is able to regulate and amplify high frequency signals with great efficiency and reliability. Furthermore, due to its fine and compact size, it does not take up too much space and can be used in tight spaces or narrow places.
The PTAB182002TCV2XWSA1 is a unique and advanced semiconductor device that offers a variety of features and benefits. Its integrated FET and MOSFET technologies provides great efficiency and reliability, while its small size allows it to be used in tight spaces or narrow places. Furthermore, its specially designed for RF applications makes it perfect for use with a variety of products, including cell phones and wireless controllers. With its great features and benefits, the PTAB182002TCV2XWSA1 is an excellent choice for anyone looking to control and amplify high frequency signals.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| PTAB182002FC-V1-R250 | Cree/Wolfspe... | 54.56 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
| PTAB182002TCV2R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC RF FET LDMOS 190W H-49... |
| PTAB182002TCV2R250XUMA1 | Infineon Tec... | 58.19 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
| PTAB182002TCV2XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC RF FET LDMOS 190W H-49... |
| PTAB182002FC-V1-R0 | Cree/Wolfspe... | 65.63 $ | 1000 | IC RF FET LDMOS 190W H-37... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
PTAB182002TCV2XWSA1 Datasheet/PDF