PTRA093302DC V1 R250 Allicdata Electronics
Allicdata Part #:

PTRA093302DCV1R250-ND

Manufacturer Part#:

PTRA093302DC V1 R250

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC RF FET LDMOS 330W H-49248H-4
More Detail: RF Mosfet
DataSheet: PTRA093302DC V1 R250 datasheetPTRA093302DC V1 R250 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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PTRA093302DC V1 R250 - Transistors - FETs, MOSFETs - RF

The PTRA093302DC V1 R250 is an advanced silicon transistor integrated circuit designed specifically for use in applications where space is a limiting factor. The device utilizes a novel silicon transistor technology developed by Toshiba to increase the device’s efficiency and reduce its overall size. This makes the PTRA093302DC V1 R250 ideal for use in automotive, avionic, and militaristic applications, where space requirements and performance levels can be quite stringent.

The PTRA093302DC V1 R250 uses an enhancement mode Field Effect Transistor (FET) which is a three-terminal voltage-controlled semiconductor device. It is a four-layer device composed of semiconductor material and can be made with either an n-channel or p-channel type FET. This is due to the flexibility of the design.

The PTRA093302DC V1 R250 operates by allowing electric current to be controlled by the electric field that is generated between the gate and drain electrodes. This electric field is modulated by the voltage applied to the gate terminal and in turn sets up a temporary level of conduction between the source and drain terminals. This is known as the on and off state. When a voltage is applied to the gate terminal the device changes from its off state to its on state, thus allowing the flow of current from the source to the drain.

The PTRA093302DC V1 R250 is also an RF device. RF is short for radio frequency. As its name suggests, RF is the frequency of electromagnetic radiation signals carried by radio waves in a wide range of frequencies. The PTRA093302DC V1 R250 is designed to be used in applications where the device must be able to operate in the frequency range of 0-250MHz. This makes the device ideal for use in avionic and industrial applications where RF signals must be transmitted and received.

In conclusion, the PTRA093302DC V1 R250 is an advanced silicon transistor integrated circuit. It is designed specifically for use in applications where space is a limiting factor. The device utilizes an enhancement mode FET which is ideal for use in applications where high levels of performance are desired. Additionally, the device is an RF device, allowing it to operate in the frequency range of 0-250MHz, which is ideal for use in avionic and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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