PTRA093302FC-V1-R2 Allicdata Electronics
Allicdata Part #:

PTRA093302FC-V1-R2-ND

Manufacturer Part#:

PTRA093302FC-V1-R2

Price: $ 58.71
Product Category:

Discrete Semiconductor Products

Manufacturer: Cree/Wolfspeed
Short Description: IC RF FET LDMOS 330W H-37248-4
More Detail: RF Mosfet LDMOS 48V 400mA 768MHz 17.25dB 79W H-372...
DataSheet: PTRA093302FC-V1-R2 datasheetPTRA093302FC-V1-R2 Datasheet/PDF
Quantity: 1000
250 +: $ 53.37240
Stock 1000Can Ship Immediately
$ 58.71
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 768MHz
Gain: 17.25dB
Voltage - Test: 48V
Current Rating: 10µA
Noise Figure: --
Current - Test: 400mA
Power - Output: 79W
Voltage - Rated: 105V
Package / Case: H-37248-4
Supplier Device Package: H-37248-4
Description

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Introduction

The PTRA093302FC-V1-R2 is a high performance RF field effect transistor (FET) that provides excellent power performance with unmatched flexibility for a wide range of applications. It is designed for use in a wide variety of high frequency and high power applications, such as microwave amplifiers, repeater amplifiers, wide band operation amplifiers, power multiplexers, and switching circuitry. It has a voltage capability of up to 50 VDC, and is well-suited for use in high power, high frequency, and digital devices.

Application Field

The PTRA093302FC-V1-R2 is an ideal FET for a wide range of applications due to its high power and frequency capabilities. It is widely used in high power amplifiers and power multiplexers as well as in applications such as switch control circuitry.In particular, this FET is well-suited for use in microwave amplifiers, repeater amplifiers, wide band operation amplifiers, and power multiplexers. It is also capable of providing power up to 50 VDC under operation. Due to its high power and frequency capabilities, the PTRA093302FC-V1-R2 can also be used in high intensity LED applications, laser diode pulsers, and detector circuits.

Working Principle

The PTRA093302FC-V1-R2 is a field effect transistor that operates on the principle of capacitive feedback. The device consists of a source, drain, and gate. When current is applied to the gate, it creates a voltage potential that brings about a change in capacitance. This capacitance change induces a current to flow between the source and the drain.The advantage of using a FET is that the gate voltage is relatively independent of the drain current. This allows for the adjustment of the current by varying the gate voltage, without needing to change the source or drain current.The PTRA093302FC-V1-R2 also utilizes a charge control region, which is composed of regions of varying dielectric constants. This region acts as a capacitor to control the drain current.

Conclusion

The PTRA093302FC-V1-R2 is an ideal FET for a wide range of applications due to its high power and frequency capabilities. It is widely used in high power amplifiers and power multiplexers as well as in applications such as switch control circuitry. It is also capable of providing power up to 50 VDC under operation, making it well-suited for use in high power, high frequency and digital devices. The device utilizes a charge control region and Capacitive feedback to provide accurate control of the drain current.

The specific data is subject to PDF, and the above content is for reference

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