PTRA093818NF-V1-R5 Allicdata Electronics
Allicdata Part #:

PTRA093818NF-V1-R5-ND

Manufacturer Part#:

PTRA093818NF-V1-R5

Price: $ 55.17
Product Category:

Discrete Semiconductor Products

Manufacturer: Cree/Wolfspeed
Short Description: IC RF LDMOS FET 6HBSOF
More Detail: RF Mosfet LDMOS 48V 200mA 925MHz ~ 960MHz 18dB 250...
DataSheet: PTRA093818NF-V1-R5 datasheetPTRA093818NF-V1-R5 Datasheet/PDF
Quantity: 1000
500 +: $ 50.16210
Stock 1000Can Ship Immediately
$ 55.17
Specifications
Series: --
Part Status: Active
Transistor Type: LDMOS
Frequency: 925MHz ~ 960MHz
Gain: 18dB
Voltage - Test: 48V
Current Rating: 10µA
Noise Figure: --
Current - Test: 200mA
Power - Output: 250W
Voltage - Rated: 105V
Package / Case: HBSOF-6-2
Supplier Device Package: PG-HBSOF-6-2
Description

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The PTRA093818NF-V1-R5 is a radio frequency (RF) MOSFET (metal-oxide-semiconductor field-effect transistor) from Monolithic Power Systems. It is designed primarily for use in linear amplifiers within telecommunications infrastructure.

The PTRA093818NF-V1-R5 provides excellent power gain and efficiency, boasting switch times as low as 50 nanoseconds and a typical drain efficiency of 70-90%. It has a power rating of 10 W and is made from the semiconductor materials silicon and gallium arsenide (GaAs). It is available with a drain-source voltage of 18 V.

The working principle of the PTRA093818NF-V1-R5 is based on the physical behavior of an electric field on a semiconductor surface. In this transistor, the electric field is generated by an electric charge on the drain-source gate. When a certain threshold voltage is applied across the drain-source gate, the electric field causes a conducting channel to form through the semiconductor material, enabling current to flow. When the electric field is reduced, the channel opens and the current flow is cut off.

Widely used in radio equipment including base stations and mobile radiotelephones, the PTRA093818NF-V1-R5 is also suitable for high linearity, low distortion amplifiers in professional broadcast equipment and satellite navigation systems.

This transistor design offers a high input impedance ensuring reliable forward-biased operation and good reverse bias stability. Its robust construction allows for operation under extreme conditions, with the minimum operating temperature being -55°C and the maximum operating temperature being 150°C.

The PTRA093818NF-V1-R5 is fabricated in a manufacturable dual-die package with a lead frame encapsulated in a halogen-free resin. This ensures excellent reliability and robustness in radio-frequency applications including mobile radio, soldier radio, GPS, wireless communication systems and wireless networks.

By combining a high-power switch time and excellent efficiency, the PTRA093818NF-V1-R5 is the ideal choice for a wide range of radio-frequency applications. Whether used in mobile radio, professional broadcast equipment or satellite navigation systems, the PTRA093818NF-V1-R5 will provide the necessary performance and reliability at an affordable price.

The specific data is subject to PDF, and the above content is for reference

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