PZTA06 Allicdata Electronics

PZTA06 Discrete Semiconductor Products

Allicdata Part #:

PZTA06TR-ND

Manufacturer Part#:

PZTA06

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 0.5A SOT-223
More Detail: Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 1W S...
DataSheet: PZTA06 datasheetPZTA06 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4
Base Part Number: PZTA06
Description

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PZTA06 is a type of bipolar junction transistors (BJT) which is classified as single or single transistor. It has many characteristics including high current gain, high frequency operation, and low collector-emitter saturation voltage. This type of transistor is suitable for applications in electronic devices such as amplifiers, switching circuits, and control circuits. It can also be used for industrial applications such as power control, high-current switching, and power converters.

A bipolar junction transistor is a three-terminal semiconductor device consisting of three layers of a semiconductor material. It is made of an N-type (or electron-rich) semiconductor in the middle and two P-type (or hole-rich) materials on the sides. When a small voltage is applied to the base terminal, electron flow is generated between the emitter and collector terminals, resulting in current flow.

The PZTA06 is designed with a High Collector-Base Breakdown Voltage and low VCE(on) capability, which makes it an ideal choice for power applications. Its low VCE(on) ensures minimal power loss during switching and therefore, less heat generation. Its high breakdown voltage allows it to withstand large reverse voltages.

The PZTA06 has a high-frequency performance, allowing it to work with higher frequency signals, such as those used in radio communication and radar. This makes it ideal for use in audio and broadcasting applications. The small size and low power consumption mean that it can be easily integrated into compact electronic devices.

The PZTA06 has a high current gain, which allows it to be used as an amplifier with a large output power for audio applications. It has a high forward current transfer ratio (FCTR) and low output voltage, so it is also suitable for switching applications. In addition, the fast switching time and low impedance levels make it a good choice for use in high-frequency switching applications.

The PZTA06 can also be used in control circuits. It has a low threshold voltage, so it can be used in controlling currents in circuits which require a low voltage. It is also used in logic circuits such as ring oscillators and flip-flops. The low power consumption makes it ideal for use in battery-powered circuits.

Overall, the PZTA06 is a versatile transistor which can be used in many different applications. Its high gain, current transfer ratio and low power consumption make it suitable for a wide range of electronic circuits. It is also easy to integrate into devices, which makes it an ideal choice for designers who are looking for a reliable and cost-effective solution.

The specific data is subject to PDF, and the above content is for reference

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