PZTA42T1G Allicdata Electronics

PZTA42T1G Discrete Semiconductor Products

Allicdata Part #:

PZTA42T1GOSTR-ND

Manufacturer Part#:

PZTA42T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 300V 0.5A SOT223
More Detail: Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 1.5W...
DataSheet: PZTA42T1G datasheetPZTA42T1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 1.5W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: PZTA42
Description

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Transistors - Bipolar (BJT) - Single

The PZTA42T1G is a part of transistor family, more specifically, a bipolar junction transistor (BJT), which is under the category of single transistors. A BJT is a type of amplification semiconductor device, designed to amplify an electrical signal by power gain. This PZTA42T1G device is made up of three terminals, the base, collector and emitter. The base-collector junction is single and the base-emitter junction is double, hence the term "bipolar".

Application Field

The PZTA42T1G transistors can be widely used in different application fields. For instance, it can be utilized in a voltage follower, which is a circuit in which the input voltage applied to the base terminal of the transistor, is adjusted to become a replica and output at the collector terminal. It can also be employed as amplifiers, which are able to increase the power, current, or voltage of a signal and generate a stronger output signal.

Working Principle

How does the PZTA42T1G device actually work? The power gain of this device is created by the flow of current in base and collector terminals of the transistor. The base of transistor is biased with the help of a DC voltage source, which allows a flow of current to pass through the base and collector terminals. When a low power signal, also known as input signal is applied to the base terminal, an amplified or large power output signal is generated at the collector’s terminal. This output signal has greater current, power or voltage compared to the input signal.

Conclusion

The PZTA42T1G is a bipolar junction transistor (BJT), which is categorized as single transistor. It has versatile use cases, including amplifier and voltage followers. The power gain of BJT is created when current flows through base and emitter terminals of the transistor.

The specific data is subject to PDF, and the above content is for reference

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