PZTA92T1G Discrete Semiconductor Products |
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Allicdata Part #: | PZTA92T1GOSTR-ND |
Manufacturer Part#: |
PZTA92T1G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 300V 0.5A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP 300V 500mA 50MHz 1.5W... |
DataSheet: | PZTA92T1G Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.06615 |
2000 +: | $ 0.05954 |
5000 +: | $ 0.05623 |
10000 +: | $ 0.05127 |
25000 +: | $ 0.04796 |
50000 +: | $ 0.04410 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 30mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | PZTA92 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PZTA92T1G is a single bipolar junction transistor, which is commonly used in the field of power amplification. It is designed to deliver ultra-high-power with excellent gain linearity and superior temperature characteristics.
The PZTA92T1G is composed of five distinct parts: the collector, base, emitter, substrate, and crystalline junction. The collector is responsible for capturing and retaining the characteristics of the electrical current flowing through the device. The base is responsible for controlling the flow of the current between the collector and the emitter by regulating the concentration of charge carriers. The emitter is the source of the current, while the substrate is the base material that houses the device’s active components. The crystalline junction has two horizontally symmetrical leads, one of which is connected to the collector and the other to the emitter.
Applications of the PZTA92T1G can be found in various audio power amplifier circuits, power switching and driving circuits, and other power-related applications. In audio power amplifiers, the PZTA92T1G can be used to generate high power output with very low distortion. In power switching and driving circuits, the PZTA92T1G is designed to amplify the current to be switched and the voltage level needed to switch the load.
The working principle of the PZTA92T1G is based on the interaction of P-N junctions between the collector and base. When conduction current passes through the device, a strong electric field is generated at the P-N junction, which causes a redistribution of charge carriers in the substrate. This redistribution of charge carriers reduces the collector resistance, allowing the device to amplify the current.
The electrical characteristics of the PZTA92T1G are heavily dependent on the thickness of the epitaxial layer, which is used to improve the thermal and electrical properties of the device. The gate resistance of the transistor is also important, as it affects the performance of the device.
Overall, the PZTA92T1G is a versatile single bipolar junction transistor that is suitable for a wide range of power-related applications. The device is designed to deliver ultra-high power with excellent gain linearity and superior temperature characteristics. Its working principle is based on the interaction of P-N junctions, which allows the device to amplify currents in various circuits.
The specific data is subject to PDF, and the above content is for reference
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