PZTA14E6327HTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	300mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20000 @ 100mA, 5V
Power - Max:	1.5W
Frequency - Transition:	125MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4
Base Part Number:	PZTA14

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Introduction

The PZTA14E6327HTSA1 is a single bipolar junction transistor (BJT) developed by Panasonic. It is a through-hole component. This transistor can be used in a wide variety of applications such as HF amplifiers, analog circuits, and switching circuits. This article provides an overview of the application field and working principle of the PZTA14E6327HTSA1 BJT.

Application Field

The PZTA14E6327HTSA1 transistor is typically used in circuits operating at high-frequency, such as HF amplifiers, analog circuits, and switching circuits. This type of transistor is also used in low-noise amplifiers, bandpass filters, and communication circuits.This type of transistor can also be used in power electronics applications, such as lighting, motor control, and energy conversion applications. It is suitable for use in high-voltage, high-current circuits.In addition to its use in HF applications, the PZTA14E6327HTSA1 is also used in signal conditioning, signal acquisition, and analog-to-digital conversion applications.

Working Principle

The PZTA14E6327HTSA1 is based on the principle of a three-layer bipolar junction transistor (BJT). This type of transistor is also known as a junction field-effect transistor (JFET). The three layers of the BJT are called the emitter, collector, and base. An electric current flows in the emitter-collector junction (called the "depletion" region) through the action of the base. A positive potential on the base creates a depletion of electrons (called the "space charge") which in turn allows the current to flow through the junction. This is referred to as "forward bias". A negative potential on the base creates a "forward bias blockers" which in turn prevents the current from flowing through the junction. This is referred to as "reverse bias". The BJT can be used as an amplifier or switch depending on the magnitude of the base bias voltage. For example, when the base bias is such that the forward bias blocker is held at the peak, then the current flow across the junction is almost zero and the BJT works as an amplifier. On the other hand, when the base bias is such that the forward bias blocker is held above the peak, then the current across the junction can flow and the BJT works as a switch.

Conclusion

The PZTA14E6327HTSA1 is a single bipolar junction transistor that can be used in a wide range of applications, such as HF amplification, analog circuits, and switching circuits. This transistor is based on the principle of a three-layer BJT, and the base bias voltage can be used to configure the BJT as an amplifier or switch.

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