PZTA44-G Allicdata Electronics

PZTA44-G Discrete Semiconductor Products

Allicdata Part #:

641-1792-2-ND

Manufacturer Part#:

PZTA44-G

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Comchip Technology
Short Description: NPN TRANISTOR 200MA 400V SOT-223
More Detail: Bipolar (BJT) Transistor NPN 400V 200mA 20MHz 1W S...
DataSheet: PZTA44-G datasheetPZTA44-G Datasheet/PDF
Quantity: 2500
2500 +: $ 0.08732
Stock 2500Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Power - Max: 1W
Frequency - Transition: 20MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Description

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Transistors - Bipolar (BJT) - Single

The PZTA44-G is a NPN silicon epitaxial planar transistor designed for use in general purpose amplifier, switching applications. It has a reliable performance and high gain. This makes it ideal for use in audio applications.

Application Field

The PZTA44-G transistor is most commonly used as an amplifier in many types of devices. It is designed for use in low-frequency amplifier applications, such as audio amplifiers, signal-amplifying circuits, and sound mixing devices.

The PZTA44-G is also used in switching applications. This type of transistor is ideal for use in durable switch construction, such as in remote control circuits and light switches. For these applications, the PZTA44-G can effectively open and close small electrical pathways.

Working Principle

The PZTA44-G is a bipolar junction transistor (BJT). This means that it utilizes current’s flow between two more doped semiconductor regions, referred to as the base and collector. The transistor has three terminals, which are the collector, base, and emitter.

When a voltage is applied to the base-emitter junction, it creates a current between the two. This creates a forward-biased diode between the base and emitter. This current, known as base current, enables current to flow through the collector and emitter.

The PZTA44-G transistor also has a high DC current gain, which is measured as the “Hoeffling constant” (hFE). This current gain is an important parameter of the transistor, as it controls the amount of current that can be amplified. For example, if the transistor has a high current gain, it can effectively amplify a small current and allow for larger signals to be amplified.

The PZTA44-G transistor also has a high breakdown voltage and can be used in various conditions. This makes them ideal for use in audio amplifiers, wireless communications, TV tuners, and other electronics.

Conclusion

The PZTA44-G is a NPN silicon epitaxial planar transistor designed for use in general purpose amplifier, switching applications. Its reliable performance and high gain makes it ideal for use in audio applications, such as amplifiers, as well as in switching applications.

The transistor has a high current gain, which is measured as the “Hoeffling constant” (hFE). This means that it can effectively amplify a small current and allow for larger signals to be amplified. Furthermore, it also has a high breakdown voltage, making it suitable for various conditions.

The specific data is subject to PDF, and the above content is for reference

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