QS6U24TR Discrete Semiconductor Products |
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| Allicdata Part #: | QS6U24TR-ND |
| Manufacturer Part#: |
QS6U24TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET P-CH 30V 1A TSMT6 |
| More Detail: | P-Channel 30V 1A (Ta) 1.25W (Ta) Surface Mount TSM... |
| DataSheet: |  QS6U24TR Datasheet/PDF |
| Quantity: | 9000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | TSMT6 (SC-95) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1.25W (Ta) |
| FET Feature: | Schottky Diode (Isolated) |
| Input Capacitance (Ciss) (Max) @ Vds: | 90pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.7nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 400 mOhm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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QS6U24TR Application Field and Working Principle
The QS6U24TR MOSFET is a high performance, single-channel, low flow, high breakdown voltage integrated circuit. It is a high voltage enhancement-mode field effect transistor (MOSFET) and is widely used in controlling load switches, level-shifting, and other functions. It features decreased input capacitance and on-resistance, high efficiency, and fast turn-on and turn-off.
The QS6U24TR is typically used in high-speed applications where fast switching times and efficiency are critical. It can also be used for pulse-width modulation (PWM) and for current-sinking and current-source applications. Other applications for the QS6U24TR include switching power supplies, DC-DC converters, serial interfacing, and data communication.
Working Principle of the QS6U24TR
The QS6U24TR is an enhancement-mode MOSFET, which is an insulated gate field effect transistor (IGFET) combining MOS capacitor structures along with a bipolar junction transistor. The enhancement-mode MOSFET works like a variable resistor, in which the amount of resistance is determined by the amount of voltage applied to the gate terminal. This allows the voltage applied to the gate to control the current flowing through the channel and the gate-to-source resistor.
The QS6U24TR is also designed to sense the gate voltage and control the current flowing through the channel. This feature makes the device particularly useful for pulse-width modulation (PWM) and for controlling load switches. The MOSFET is also designed for low gate-to-drain capacitance, which helps reduce turn-on and off times, increasing the overall efficiency of the device.
Conclusion
The QS6U24TR is a high performance, single-channel, low flow, high breakdown voltage integrated circuit. It is a high voltage enhancement-mode field effect transistor (MOSFET) and is used in controlling load switches, level-shifting, and other functions. It is particularly useful for high-speed applications where fast switching times and efficiency are critical, such as pulse-width modulation (PWM) and for current-sinking and current-source applications. Other applications of the QS6U24TR are switching power supplies, DC-DC converters, serial interfacing, and data communication. It is designed to sense the gate voltage and control the current flowing through the channel, and also for low gate-to-drain capacitance, which helps reduce turn-on and off times, increasing the overall efficiency of the device.
The specific data is subject to PDF, and the above content is for reference
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