Allicdata Part #: | QS8M11TCRTR-ND |
Manufacturer Part#: |
QS8M11TCR |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N/P-CH 30V 3.5A TSMT8 |
More Detail: | Mosfet Array N and P-Channel 30V 3.5A Surface Mou... |
DataSheet: | QS8M11TCR Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.20801 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N and P-Channel |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | TSMT8 |
Base Part Number: | *M11 |
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QS8M11TCR transistor array is a series of 8-element MOSFET integrated circuits (ICs). These devices are used in applications that require high speed, low power voltage conversion. They are most often used in touchscreen systems, where they provide fast switching of a high current load. The QS8M11TCR is also widely used in power supply systems and motor control circuits.
The QS8M11TCR utilizes an 8-element MOSFET array that includes two n-channel and six p-channel transistors. The n-channel transistors (NMOS) provide low-power voltage conversion and the p-channel transistors (PMOS) provide high-power voltage conversion. Each transistor is connected to its own set of gate and drain pins for flexible configuration and control. All eight transistors are typically connected in parallel, with the gates of the NMOS transistors connected to the gates of the PMOS transistors.
The working principle of the QS8M11TCR is based on the conduction and switching of electrons. When the gate voltage of the QS8M11TCR is below a certain threshold value, the electrons flow from the drain to the source and the device is in a “on” state. When the gate voltage is above the threshold value, the electrons stop flowing and the device is in a “off” state. This allows the user to control the direction and the amount of current passing through the device and this is how the QS8M11TCR is used to convert between low and high voltages.
The QS8M11TCR is typically used in applications where precise control of high-speed and low-power voltage conversion is required. Its small size and low power consumption makes it ideal for portable devices such as smartphones. It is also used in touchscreen systems, power supplies and motor control circuits. The advantage of this device is that it can perform high-speed switching in a very small package.
In conclusion, the QS8M11TCR is a series of 8-element MOSFET transistors and is a great choice for applications that require precise control of high and low voltage switching. Its small size and low power consumption make it perfect for portable applications and touchscreen systems. Furthermore, the device provides fast switching, making it ideal for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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