Allicdata Part #: | QS8M12TCRTR-ND |
Manufacturer Part#: |
QS8M12TCR |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N/P-CH 30V 4A TSMT8 |
More Detail: | Mosfet Array N and P-Channel 30V 4A 1.5W Surface M... |
DataSheet: | QS8M12TCR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.22586 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Base Part Number: | *M12 |
Supplier Device Package: | TSMT8 |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 1.5W |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 3.4nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 4A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The QS8M12TCR is a field-effect transistor (FET) array, consisting of eight monolithic N-channel field effect transistors in a single package. It is predominantly used in audio and automotive applications, as well as high-speed LAN applications with its low on-state resistance and quick switch-off characteristics. The working principle of the FET array is based on the flow of electric current through an insulated gate. The application field of FET arrays is mainly in the use of power amplifiers, particularly audio amplifiers, in the automotive industry, and in switching applications.
FETs and MOSFETs are transistor-based technologies, which are used in the construction of integrated circuit (IC) chips. They form one of the core components of many electronic systems, and as such, there has been significant research and development into their design and application. A power amplifier in an audio system is one example of an electronic system where FETs and MOSFETs are used. FET arrays are specifically designed for this type of application, as they provide a set of N-channel transistors in an integrated package, that can switch quickly and reliably.
The QS8M12TCR is an example of such a FET array and consists of eight N-channel FETs. The on-state resistance of the FET array is lower than that of other similar devices, due to the use of multiple devices in the array, and has a quick switch-off time. It is also relatively robust and is used in a wide variety of applications as a result. These include audio amplifiers, power supplies, automotive power electronics, high-speed LAN applications, and many others.
The working principle of FET arrays is based on the flow of electric current through an insulated gate. The gate acts as an insulator, preventing electric current from passing through the device, until a certain threshold voltage is reached. When this voltage is applied to the gate, it can break down the insulator and permit the current to flow, thereby turning the device on. If the voltage is removed, the gate returns to its insulating state and the device is switched off.
The advantages of using FET arrays in electronic systems are numerous. They are relatively low cost, robust, and offer superior performance over other transistor-based technologies. Additionally, FETs and MOSFETs do not generate additional noise, which is an important factor for audio systems and high-speed LAN applications. The QS8M12TCR is one example of an FET array and is used in a variety of applications, due to its superior performance and reliability.
The QS8M12TCR field-effect transistor (FET) array is primarily used in audio and automotive applications, as well as high-speed LAN applications. It consists of eight monolithic N-channel FETs in an integrated package that can switch quickly and with low on-state resistance. The working principle of FET arrays is based on the flow of electric current through an insulated gate, and is used in a wide variety of electronic systems for its superior performance, low cost, and robustness.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...