QS8M12TCR Allicdata Electronics
Allicdata Part #:

QS8M12TCRTR-ND

Manufacturer Part#:

QS8M12TCR

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N/P-CH 30V 4A TSMT8
More Detail: Mosfet Array N and P-Channel 30V 4A 1.5W Surface M...
DataSheet: QS8M12TCR datasheetQS8M12TCR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.22586
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Base Part Number: *M12
Supplier Device Package: TSMT8
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 42 mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The QS8M12TCR is a field-effect transistor (FET) array, consisting of eight monolithic N-channel field effect transistors in a single package. It is predominantly used in audio and automotive applications, as well as high-speed LAN applications with its low on-state resistance and quick switch-off characteristics. The working principle of the FET array is based on the flow of electric current through an insulated gate. The application field of FET arrays is mainly in the use of power amplifiers, particularly audio amplifiers, in the automotive industry, and in switching applications.

FETs and MOSFETs are transistor-based technologies, which are used in the construction of integrated circuit (IC) chips. They form one of the core components of many electronic systems, and as such, there has been significant research and development into their design and application. A power amplifier in an audio system is one example of an electronic system where FETs and MOSFETs are used. FET arrays are specifically designed for this type of application, as they provide a set of N-channel transistors in an integrated package, that can switch quickly and reliably.

The QS8M12TCR is an example of such a FET array and consists of eight N-channel FETs. The on-state resistance of the FET array is lower than that of other similar devices, due to the use of multiple devices in the array, and has a quick switch-off time. It is also relatively robust and is used in a wide variety of applications as a result. These include audio amplifiers, power supplies, automotive power electronics, high-speed LAN applications, and many others.

The working principle of FET arrays is based on the flow of electric current through an insulated gate. The gate acts as an insulator, preventing electric current from passing through the device, until a certain threshold voltage is reached. When this voltage is applied to the gate, it can break down the insulator and permit the current to flow, thereby turning the device on. If the voltage is removed, the gate returns to its insulating state and the device is switched off.

The advantages of using FET arrays in electronic systems are numerous. They are relatively low cost, robust, and offer superior performance over other transistor-based technologies. Additionally, FETs and MOSFETs do not generate additional noise, which is an important factor for audio systems and high-speed LAN applications. The QS8M12TCR is one example of an FET array and is used in a variety of applications, due to its superior performance and reliability.

The QS8M12TCR field-effect transistor (FET) array is primarily used in audio and automotive applications, as well as high-speed LAN applications. It consists of eight monolithic N-channel FETs in an integrated package that can switch quickly and with low on-state resistance. The working principle of FET arrays is based on the flow of electric current through an insulated gate, and is used in a wide variety of electronic systems for its superior performance, low cost, and robustness.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "QS8M" Included word is 4
Part Number Manufacturer Price Quantity Description
QS8M12TCR ROHM Semicon... 0.25 $ 1000 MOSFET N/P-CH 30V 4A TSMT...
QS8M11TCR ROHM Semicon... 0.22 $ 3000 MOSFET N/P-CH 30V 3.5A TS...
QS8M13TCR ROHM Semicon... 0.34 $ 15000 MOSFET N/P-CH 30V 6A/5A T...
QS8M51TR ROHM Semicon... 0.41 $ 1000 MOSFET N/P-CH 100V 2A/1.5...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics