QS8M51TR Discrete Semiconductor Products

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The QS8M51TR is a four-channel array power MOSFET from ON Semiconductor. This array device was designed with a low rDS(on) of 6 mΩ, a low gate charge of 5.5 nC, and an array of low RDS(on) MOSFETs. The QS8M51TR also features a fast switching speed, as well as a low gate-to-source capacitance, which makes it ideal for high frequency applications. This array device is packaged in a leadless, ultra small thin shrink small-outline package (TSSOP) with a maximum junction temperature of 150°C.

The QS8M51TR is a versatile device and offers many advantages, including low gate charge and low RDS(on), making it an excellent choice for applications such as power management, power switch control, RF power amplifiers, DC/DC converters, motor control and general purpose power stages. This device is also suitable for applications which require high efficiency and fast pulse response, such as switching power supplies which require fast gate drive.

The QS8M51TR is a power MOSFET array which operates by allowing a current to pass through the device when its gate is properly biased. Each MOSFET in the array is electrically and thermally coupled, thus allowing multiple MOSFETs to be used in order to efficiently control the current flow. This device is able to reduce power dissipation by sharing the on-resistance over multiple MOSFETs, as well as reducing the gate charge by biasing the gate voltage across all four MOSFETs together. This array device is typically driven by a common noninverting driver, such as an inverter, to ensure that all of the MOSFETs switch at the same time.

The QS8M51TR is also ideal for low power consumption applications as its low gate charge results in a shorter turn-off time. This reduces power consumption by minimizing the amount of time required for switching between states. In addition, its ability to dissipate heat through the chip’s package and its low RDS(on) further reduce power consumption by providing higher efficiency. Its TSSOP package also enables easier integration with other components, allowing for greater flexibility in the design and implementation of power components.

The QS8M51TR is an array of four power MOSFETs which offer low on-resistance, low gate charge, and a fast switching speed. This device is suitable for power management, switch mode power supplies, RF power amplifiers, motor control, and general purpose power stages, and is also ideal for low power consumption applications. The QS8M51TR’s TSSOP package enables easier integration with other components, providing greater flexibility in the design and implementation of power components.

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