Allicdata Part #: | QS8M13TCRTR-ND |
Manufacturer Part#: |
QS8M13TCR |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N/P-CH 30V 6A/5A TSMT8 |
More Detail: | Mosfet Array N and P-Channel 30V 6A, 5A 1.5W Surfa... |
DataSheet: | QS8M13TCR Datasheet/PDF |
Quantity: | 15000 |
3000 +: | $ 0.30429 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Base Part Number: | *M13 |
Supplier Device Package: | TSMT8 |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 1.5W |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 6A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A, 5A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The QS8M13TCR is a type of field-effect transistor (FET) array. It is part of a family of products often referred to as power MOSFET (metal-oxide-semiconductor field-effect transistor) arrays or simply MOSFET arrays. As its name implies, the QS8M13TCR is designed to provide an extremely powerful array of transistor devices in a very small package. This makes it ideal for a wide range of electronic applications.
The QS8M13TCR has six transistors that are all connected in parallel. This allows for higher current capacity and lower voltage drop across the array. In addition, the QS8M13TCR has a built-in reverse polarity protection feature, which helps to protect the array from damage due to reverse voltage.
A typical application for the QS8M13TCR is as an audio amplifier. It is used in place of conventional bipolar transistors to provide a better signal-to-noise ratio and lower output impedance. This is done by using the QS8M13TCR\'s paralleled transistor structure. The transistors form a bridge between the input and output of the amplifier. This allows the signal to be amplified with minimal distortion. In addition, the QS8M13TCR can be used in place of regular power MOSFETs, which can provide higher current capacity and better thermal performance.
The working principle of the QS8M13TCR is relatively straightforward. It is a voltage-controlled device, meaning that it is operated by applying a voltage that is higher than the gate voltage of the transistors. This voltage is necessary to \'turn on\' the transistors and allow current to flow from the input to the output. The amount of current that can flow through the array can be varied by adjusting the gate voltage. In addition, the QS8M13TCR has a built-in voltage-limiting circuit, which helps to protect the transistors from excessive current and voltage.
In summary, the QS8M13TCR is a very powerful and versatile type of semiconductor device. Its paralleled transistor structure allows it to be used as an audio amplifier, while its built-in reverse polarity protection and voltage-limiting circuits add to its protective capabilities. As a result, the QS8M13TCR is a popular choice for many high-power applications.
The specific data is subject to PDF, and the above content is for reference
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