Allicdata Part #: | R5021ANJTL-ND |
Manufacturer Part#: |
R5021ANJTL |
Price: | $ 2.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 10V DRIVE LPTS |
More Detail: | N-Channel 500V 21A (Tc) 100W (Tc) Surface Mount LP... |
DataSheet: | R5021ANJTL Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.07931 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 10.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LPTS |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The R5021ANJTL is a transistor part of the TAXI type. This type of transistor is a Field Effect Transistor (FET), with a single gate type. As one of the major components in an electronic system, transistors play a crucial role in controlling the behavior and operation of the system. FETs are field effect transistors that are used to control the flow of power in a circuit.
The general purpose of a FET is to provide a high input impedance that offers very high speed switching, allowing it to act as a switch or amplifier. R5021ANJTL FETs are used in a wide range of applications, including audio amplifiers, current sensing, and protection circuits. They are also used in high gain amplifiers and in DC/DC converters and voltage regulators.
The R5021ANJTL FET has a single-channel, non-polarized device architecture. This design allows it to offer high speed switching, but with low power consumption. It also has an extremely low on-state resistance, which helps it provide highly accurate current sensing and power control. Furthermore, it has a high voltage rating that makes it suitable for a variety of applications.
The working principle of the R5021ANJTL is based on the concept of a field effect transistor, which is an insulated gate field effect transistor, or IG-FET. This type of FET has a single gate type, meaning it has a single insulated gate that is used to control the flow of current. This control is achieved by applying a voltage to the insulated gate which allows current to flow through the device. As the voltage applied to the gate changes, so does the amount of current flowing through the device.
The R5021ANJTL is a versatile and reliable FET that can be used in a variety of applications. It is suitable for audio amplifiers, current sensing, protection circuits, high gain amplifiers, and DC/DC converters and voltage regulators. Its low power consumption and extremely low on-state resistance make it an excellent choice for a variety of applications, providing highly accurate current sensing and power control.
The specific data is subject to PDF, and the above content is for reference
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