| Allicdata Part #: | R5207ANDTL-ND |
| Manufacturer Part#: |
R5207ANDTL |
| Price: | $ 0.69 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 10V DRIVE CPT |
| More Detail: | N-Channel 525V 7A (Ta) 40W (Tc) Surface Mount CPT3 |
| DataSheet: |  R5207ANDTL Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.62499 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 525V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 40W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | CPT3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The R5207ANDTL is a N-Channel silicon field-effect transistor (FET). It is designed for general purpose applications. This transistor operates with a 40V maximum drain source voltage and a 0.11mA source current. This device uses a silicon gate process to allow high breakdown voltage and low ON resistance. The R5207ANDTL enhances the performance of communication systems, audio amplifiers and signal processing applications.
The R5207ANDTL is made from a discrete, monolithic FET. The device is composed of a single silicon layer that forms the drain, source and gate terminals. The device is a single-gate FET, with a single gate-producing a single set of drain-source current. This results in a low on-resistance for relatively low gate-source voltages. The R5207ANDTL is a self-aligning FET, meaning that the gate oxide and source oxide are lined up in the same plane, allowing for a low resistance path between the source and drain.
The operation of the R5207ANDTL is based on the principles of field-effect manipulation. In simple terms, a voltage applied to the gate terminal of the device modulates the flow of current between the source and the drain terminals. The dynamic resistance of the FET is governed by external factors, primarily the applied gate voltage. When a high gate voltage is supplied, the resistance increases and vice versa when a low gate voltage is supplied.
In terms of applications, the R5207ANDTL is ideal for communication systems, audio amplifiers and signal processing applications. It is also suitable for use in digital circuits, as it can be used for high-speed switching applications. This type of device is also suitable for applications where power dissipation is a concern, due to its low threshold voltage. Finally, the R5207ANDTL can be used in applications that require high-performance FETs, due to its low on-resistance and low gate threshold voltage.
In conclusion, the R5207ANDTL is a versatile and reliable N-Channel FET suitable for general purpose applications. Its low on-resistance and low gate threshold voltage make it a great choice for high-performance FETs. It is also a suitable device for switching and power dissipation applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| R5207ANDTL | ROHM Semicon... | 0.69 $ | 1000 | MOSFET N-CH 10V DRIVE CPT... |
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