R6030235ESYA

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	200V
Current - Average Rectified (Io):	350A
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 800A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	2µs
Current - Reverse Leakage @ Vr:	50mA @ 200V
Capacitance @ Vr, F:	--
Mounting Type:	Chassis, Stud Mount
Package / Case:	DO-205AB, DO-9, Stud
Supplier Device Package:	DO-205AB, DO-9
Operating Temperature - Junction:	-45°C ~ 150°C

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Introduction to R6030235ESYA

The R6030235ESYA is a type of diode which has been specifically designed to handle high current at high temperatures. It is a single-chip rectifier and includes an ultrafast recovery capability that allows it to be used in applications such as AC/DC converters and switching regulators. The device has a maximum reverse voltage of 30V and can handle up to 15A. This makes it suitable for use in high-power applications and for controlling the flow of electricity in a circuit.

Application Field of R6030235ESYA

The R6030235ESYA is most commonly used in AC/DC converters as it allows for the efficient conversion of alternating current (AC) to direct current (DC). It can also be used in power supply designs in order to control the flow of electrical current in a circuit. It is commonly used in switching regulators, LCD displays, LED lighting, and other high-current applications.

Working Principle of R6030235ESYA

The working principle of the R6030235ESYA is based on the controlled flow of electrons moving through the diode. The diode consists of two semiconductor layers that form a junction between them. When a voltage is applied across the junction, carriers will move from the p-type layer to the n-type layer, allowing current to flow through the diode.The two semiconductor layers also form Schottky barriers which can be used to control the current flow through the diode. The Schottky barrier works by preventing electrons from moving through the diode until the potential across the junction is greater than the barrier. This allows for a controlled flow of current to pass through the diode and allows for more efficient power management.

Conclusion

The R6030235ESYA is a single-chip rectifier that is designed for high power applications and for controlling the flow of electricity in a circuit. It works by using semiconductor junction layers which form Schottky barriers that can be used to control the flow of electrons. The device has a maximum reverse voltage of 30V and can handle up to 15A, making it ideal for use in AC/DC converters, switching regulators, LCD displays, and other high-current applications.

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