R6035ENZC8

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The R6035ENZC8 is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that falls into the category of single devices. While it is available in many different versions for different applications, this type of MOSFET features high drain-source current capacity with low bias voltage. This makes it an ideal solution for applications requiring high switching speed, and it is commonly used in such areas as audio amplifiers, digital integrated circuits, and power circuits.

The R6035ENZC8 MOSFET features a drain-source voltage of 40V and a drain current of 3.2A at 25℃. It has a maximum gate-source voltage of ±20V and a maximum drain-source resistance of 10mΩ at 1MHz. It has low gate drive requirements, with a typical gate capacitance of only 18pF. The device is manufactured with a TO-220 surface mount package.

The working principle of the R6035ENZC8 MOSFET is based on the interaction between the gate and the drain-source channels of the device. When the gate voltage is at a low level, the channel is pinched off and the device is in the off-state. As the gate voltage increases, the channel opens and the device is in the on-state, allowing current to pass between the drain and source. This openness of the channel is determined by the threshold voltage required for the device to operate. The R6035ENZC8 has a threshold voltage of 0.7V.

The R6035ENZC8 can be used in applications requiring a fast switching time due to its low threshold voltage. Some of the most common applications for the device include audio amplifiers, digital integrated circuits, and power circuits. It is also useful in power converters, power on reset circuits, and low-side switching applications. The device is also ideal for applications requiring low gate drive requirements, such as RF power amplifiers.

In summary, the R6035ENZC8 is a type of MOSFET that falls into the category of single devices. It features a drain-source voltage of 40V and drain current at 3.2A at 25℃, a maximum gate-source voltage of ±20V, and a maximum drain-source resistance of 10mΩ at 1MHz. It has a threshold voltage of 0.7V, making it ideal for applications requiring a fast switching time. This makes it an ideal solution for applications in audio amplifiers, digital integrated circuits, and power circuits, as well as power converters, power on reset circuits and low-side switching applications.

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